Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

[1]  M. Stroscio,et al.  Raman analysis of phonon modes in a short period AlN/GaN superlattice , 2018 .

[2]  Can Bayram,et al.  Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model , 2017 .

[3]  N. Grandjean,et al.  Critical thickness of GaN on AlN: impact of growth temperature and dislocation density , 2017 .

[4]  D. Broido,et al.  Thermal conductivity and large isotope effect in GaN from first principles. , 2012, Physical review letters.

[5]  Hadis Morkoç,et al.  Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors , 2011 .

[6]  Umesh K. Mishra,et al.  GaN-Based RF Power Devices and Amplifiers , 2008, Proceedings of the IEEE.

[7]  Jacob B. Khurgin,et al.  Hot phonon effect on electron velocity saturation in GaN: A second look , 2007 .

[8]  A. Balandin,et al.  Phonon Engineering in Hetero- and Nanostructures , 2007 .

[9]  Mathew C. Schmidt,et al.  Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes , 2007 .

[10]  G. P. Srivastava,et al.  Long-wavelength nonequilibrium optical phonon dynamics in cubic and hexagonal semiconductors , 2004 .

[11]  U. Mishra,et al.  AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.

[12]  Hiroshi Harima,et al.  TOPICAL REVIEW: Properties of GaN and related compounds studied by means of Raman scattering , 2002 .

[13]  Mitra Dutta,et al.  Phonons in Nanostructures , 2001 .

[14]  J. Hayes,et al.  Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice , 2001 .

[15]  S. M. Komirenko,et al.  Energy-dependent electron scattering via interaction with optical phonons in wurtzite crystals and quantum wells , 2000 .

[16]  S. M. Komirenko,et al.  Dispersion of polar optical phonons in wurtzite quantum wells , 1999 .

[17]  A. N. Smirnov,et al.  Phonon dispersion and Raman scattering in hexagonal GaN and AlN , 1998 .

[18]  M. Stroscio,et al.  Optical-phonon confinement and scattering in wurtzite heterostructures , 1998 .

[19]  B. Ridley,et al.  The LO phonon lifetime in GaN , 1996 .

[20]  W. Knap,et al.  Determination of the effective mass of GaN from infrared reflectivity and Hall effect , 1996 .

[21]  Michael Kunzer,et al.  Determination of the GaN/AlN band offset via the (/0) acceptor level of iron , 1994 .

[22]  R. Loudon.  The Raman effect in crystals , 1964 .

[23]  Nick Engler,et al.  THE SECOND look. , 1954, Cancer bulletin.