Si-analog IC's for 20 Gb/s optical receiver

This paper describes two kinds of Si-analog ICs, a preamplifier IC and a decision IC consisting of a gain-controllable amplifier and a D-type flip flop (D-F/F) for a 20 Gb/s optical receiver. A 20 Gb/s optical receiver for the generation beyond 10 Gb/s has been fabricated in hybrid circuit technology. However, the development of high-speed analog ICs operating at 20 Gb/s, making possible reduced system size, is indispensable for stable system operation in practical application. >

[1]  J. Hauenschild,et al.  30 Gbit/s multiplexer and demultiplexer ICs in silicon bipolar technology , 1992 .

[2]  Seiji Nishi,et al.  A 20-Gb/s flip-flop circuit using direct-coupled FET logic , 1993 .

[3]  Mau-Chung Frank Chang,et al.  AlGaAs/GaAs HBT IC's for high-speed lightwave transmission systems , 1992 .

[4]  T. Suzaki,et al.  A 15.5 GHz bandwidth Si bipolar preamplifier , 1992, Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.

[5]  Hamano Hiroshi,et al.  20 Gbit/s AlGaAs/GaAs-HBT 2:1 selector and decision ICs , 1991 .

[6]  P. R. Smith,et al.  A 28 GHz transimpedance preamplifier with inductive bandwidth enhancement , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[7]  Osaake Nakajima,et al.  Twenty-Gbit/s signal transmission using a simple high-sensitivity optical receiver , 1992 .

[8]  K. Murata,et al.  25 Gbit/s selector module using 0.2 mu m GaAs MESFET technology , 1993 .

[9]  R.A. Blauschild,et al.  A 4-terminal wide-band monolithic amplifier , 1981, IEEE Journal of Solid-State Circuits.

[10]  J. Hauenschild,et al.  A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology , 1992, Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.

[11]  M. Soda,et al.  All-silicon IC 10 Gb/s optical receiver , 1993, IEEE Photonics Technology Letters.

[12]  M. Suzuki,et al.  20 Gbit/s GaAs MESFET multiplexer IC using a novel T-type flip-flop circuit , 1992 .

[13]  H. Tezuka,et al.  Si bipolar chip set for 10-Gb/s optical receiver , 1992 .

[14]  J. Akagi,et al.  Five AlGaAs/GaAs HBT ICs for a 20 Gb/s optical repeater , 1994, Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.

[15]  Yasuhiko Kuriyama,et al.  Over 40 Gbit/s ultrahigh-speed multiplexer IC implemented with high f/sub max/ AlGaAs/GaAs HBTs , 1994 .

[16]  H. Ichino.  20 Gb/s digital SSIs using AlGaAs/GaAs heterojunction bipolar transistors for future optical transmission systems , 1993 .

[17]  J. Hauenschild,et al.  25 Gbit/s decision circuit, 34 Gbit/s multiplexer, and 40 Gbit/s demultiplexer IC in selective epitaxial Si bipolar technology , 1993 .