Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications

SiC-MOSFETs provide superior performance for next generation power electronics systems. High threshold voltage 600 V SiC-MOSFETs were realized utilizing a reoxidation process, which drastically improves a tradeoff between an ON-resistance and a threshold voltage. Low-loss SiC-MOSFETs with a 1200 V/100-A rating have been developed. Using the developed SiC-MOSFETs, 1200 V/800-A high-power full SiC module with an ON-resistance as low as 2.9 mΩ at 150 °C was successfully fabricated. The high-power module markedly reduces power loss especially at high carrier frequency. Large-area 3300 V SiC-MOSFETs with an ON-resistance of 52 mΩ at 175 °C exhibit an adequate reverse bias safe operating area and 3300 V SiC-MOSFETs screened by applying a body diode current stress show stable characteristics under a continuous current through their body diode for 1000 h.

[1]  T. Oomori,et al.  Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2 , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

[2]  Tatsuo Ozeki,et al.  Switching Characteristics of SiC-MOSFET and SBD Power Modules , 2006 .

[3]  Y. Nakao,et al.  Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET , 2006 .

[4]  S. Nakata,et al.  Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs , 2009 .

[5]  T. Oomori,et al.  Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[6]  R. A. Wood,et al.  Evaluation of a 1200-V, 800-A All-SiC Dual Module , 2011, IEEE Transactions on Power Electronics.

[7]  Lei Wang,et al.  3.3kV SiC MOSFETs designed for low on-resistance and fast switching , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

[8]  Tsunenobu Kimoto,et al.  Ultrahigh-voltage SiC devices for future power infrastructure , 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[9]  S. Hino,et al.  Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal–Oxide–Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V , 2013 .

[10]  S. Hino,et al.  Remarkable advances in SiC power device technology for ultra high power systems , 2013, 2013 IEEE International Electron Devices Meeting.

[11]  S. Yamakawa,et al.  Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[12]  Y. Nakao,et al.  Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode , 2014 .

[13]  S. Harada,et al.  Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces , 2014 .

[14]  Keiji Wada,et al.  Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination , 2014 .

[15]  Takuma Suzuki,et al.  14.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC (000-1) , 2014 .

[16]  S. Ryu,et al.  Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).