Modulation spectroscopy of semiconductor microstructures

Abstract This paper reviews some recent interesting applications of modulation spectroscopy to study the electronic transitions in GaAs GaAlAs parabolic quantum wells, short-period, strained layer |frsol|GeSi/Si, GeSi Ge and GeSi Ge 0.8 Si 0.2 superlattices and strained layer InGaAs GaAs single quantum wells. In addition, the discussion will include the use of SIN+ (SIP+) structures to evaluate surface electric fields and hence Fermi level pinning, investigation of epilayers/heterojunctions, studies of the two-dimensional electron gas in modulation-and δ-doped material, work on actual device structures such as HBTs and finally a new variation of the modulation method of differential reflectance.

[1]  A. Ksendzov,et al.  Photoreflectance study of InxGa1-xAs/GaAs single quantum wells , 1990 .

[2]  Reynolds,et al.  Excited states of the light- and heavy-hole free excitons observed in photoreflectance. , 1989, Physical Review B (Condensed Matter).

[3]  A. Ksendzov,et al.  Unambiguous identification of heavy-and light-hole states in the Photoreflectance of InxGa1−xAs/GaAs heterostructures , 1990 .

[4]  H. R. Chandrasekhar,et al.  Spectroscopic studies of strained-layer GaSbAlSb superlattices , 1990 .

[5]  Gil,et al.  Differential spectroscopy of GaAs-Ga1-xA , 1987, Physical review. B, Condensed matter.

[6]  J. L. Shay.  Photoreflectance Line Shape at the Fundamental Edge in Ultrapure GaAs , 1970 .

[7]  R. Enderlein,et al.  An analysis of electro-modulation mechanisms in quantum wells , 1989 .

[8]  O. J. Glembocki,et al.  Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions , 1985 .

[9]  A. Ramdas.  Modulation, photoluminescence, and Raman spectroscopy of semiconductor heterostructures , 1988 .

[10]  H. Morkoç,et al.  Interference effects probed by photoreflectance spectroscopy , 1989 .

[11]  D. Jiang,et al.  Photoreflectance of selectively doped n-AiGaAs/GaAs heterostructures , 1989 .

[12]  T. Pearsall.  Silicon-germanium alloys and heterostructures: Optical and electronic properties , 1989 .

[13]  Pearsall,et al.  Electronic structure of Ge/Si monolayer strained-layer superlattices. , 1989, Physical review. B, Condensed matter.

[14]  Gustaaf Borghs,et al.  Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures , 1989 .

[15]  M. Mattingly,et al.  Band‐gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP , 1990 .

[16]  D. Arent,et al.  Franz–Keldysh oscillations originating from a well‐controlled electric field in the GaAs depletion region , 1989 .

[17]  Joyce,et al.  Concentration-dependent band offset in InxGa1-xAs/GaAs strained quantum wells. , 1988, Physical review. B, Condensed matter.

[18]  Marzin,et al.  Optical investigation of a new type of valence-band configuration in InxGa1-xAs-GaAs strained superlattices. , 1985, Physical review. B, Condensed matter.

[19]  Kenji Taniguchi,et al.  Photoreflectance and Photoluminescence Study of (GaAs)m/(AlAs)5 (m=3-11) Superlattices: Direct and Indirect Transition , 1989 .

[20]  Pearsall,et al.  Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge. , 1989, Physical review letters.

[21]  D. K. Gaskill,et al.  Photoreflectance surface Fermi level measurements of GaAs subjected to various chemical treatments , 1988 .

[22]  A. Bernussi,et al.  Photoreflectance measurements on Si δ‐doped GaAs samples grown by molecular‐beam epitaxy , 1990 .

[23]  J. Woodall,et al.  Photoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substrates , 1990 .

[24]  Bajaj,et al.  Excitonic transitions in GaAs/GaxAl1-xAs quantum wells observed by photoreflectance spectroscopy: Comparison with a first-principles theory. , 1988, Physical review. B, Condensed matter.

[25]  Lee,et al.  Piezo- and photomodulated reflectivity spectra of ZnSe/GaAs and CdTe/InSb epilayers. , 1988, Physical review. B, Condensed matter.

[26]  Fred H. Pollak,et al.  Atomic layer epitaxy of GaInP ordered alloy , 1990 .

[27]  Hecht.  Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formation. , 1990, Physical review. B, Condensed matter.

[28]  Stanford R. Ovshinsky,et al.  Band‐gap profiling for improving the efficiency of amorphous silicon alloy solar cells , 1989 .

[29]  Kang L. Wang,et al.  Electronic transitions in a SimGen strained monolayer superlattice measured by photoreflectance , 1990 .

[30]  M. Gal,et al.  Novel contactless electroreflectance spectroscopy of semiconductors , 1990 .

[31]  H. Shen,et al.  Modulation spectroscopy characterization of MOCVD semiconductors and semiconductors structures , 1989 .

[32]  T. S. Moss,et al.  Handbook on semiconductors , 1980 .

[33]  H. Shen,et al.  Photoreflectance characterization of semiconductors and semiconductor heterostructures , 1990 .

[34]  Y. Hamakawa,et al.  Electroreflectance study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy , 1988 .

[35]  Gaillard,et al.  Observation of the Wannier-Stark quantization in a semiconductor superlattice. , 1988, Physical review letters.

[36]  Robert Glosser,et al.  Modulation spectroscopy as a tool for electronic material characterization , 1988 .

[37]  B. V. Shanabrook,et al.  Electromodulation spectroscopy of confined systems , 1989 .

[38]  D. E. Aspnes,et al.  Schottky-Barrier Electroreflectance: Application to GaAs , 1973 .

[39]  H. Morkoç,et al.  Miniband dispersion in GaAs/AlxGa1−xAs superlattices with wide wells and very thin barriers , 1988 .

[40]  J. Woodall,et al.  Photoreflectance study of Fermi level changes in photowashed GaAs , 1990 .

[41]  H. Shen,et al.  Modulation spectroscopy in superlattices , 1989 .

[42]  P. Holloway,et al.  Optical investigations of ion implant damage in silicon , 1988 .

[43]  Wilson,et al.  Photoreflectance from GaAs and GaAs/GaAs interfaces. , 1989, Physical review. B, Condensed matter.

[44]  Pearsall,et al.  Structurally induced optical transitions in Ge-Si superlattices. , 1987, Physical review letters.

[45]  J. E. Potts,et al.  Study of the interface of undoped and p‐doped ZnSe with GaAs and AlAs , 1990 .

[46]  F. Pollak,et al.  Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance , 1990 .

[47]  Shen,et al.  Electromodulation mechanisms for the uncoupled and coupled states of a GaAs/Ga0.82Al , 1988, Physical review. B, Condensed matter.

[48]  A. Gossard,et al.  Electroreflectance of GaAs‐AlGaAs modulation‐doped field‐effect transistors , 1985 .

[49]  Hamakawa,et al.  Photoreflectance study on residual strain in heteroepitaxial gallium arsenide on silicon. , 1990, Physical review. B, Condensed matter.

[50]  P. M. Raccah,et al.  Electron beam electroreflectance studies of GaAs and CdTe surfaces , 1988 .

[51]  P. Bhattacharya,et al.  Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructures , 1989 .