Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor
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M. Terrones | V. Crespi | Y. Lei | K. Fujisawa | Yuanxi Wang | A. Elías | M. Phan | P. Hopkins | Saptarshi Das | N. Alem | Fu Zhang | D. Olson | Tianyi Zhang | Amritanand Sebastian | Rahul Pendurthi | Mingzu Liu | B. Zheng | Y. Pham | V. O. Jimenez | V. Kalappattil | L. Miao