Exploring Support Vector Regression for Modeling of GaN HEMT

This paper, for the first time, presents a support vector regression (SVR) based small signal modelling approach for a GaN High Electron Mobility Transistor (HEMT). It makes use of the nonlinear Gaussian or Radial Basis kernel function. The proposed technique has been demonstrated by modelling the small signal behavior of a 4x100µm GaN HEMT over a broad frequency range of 1-18 GHz with multi-biasing sets and measured S-parameters. An extremely good agreement has been found between the measured and the modelled performance for the complete frequency range.

[1]  Ta-Wen Kuan,et al.  VLSI Design of an SVM Learning Core on Sequential Minimal Optimization Algorithm , 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[2]  Vladimir N. Vapnik,et al.  The Nature of Statistical Learning Theory , 2000, Statistics for Engineering and Information Science.

[3]  Umesh K. Mishra,et al.  The toughest transistor yet [GaN transistors] , 2002 .

[4]  Bernhard Schölkopf,et al.  Support vector learning , 1997 .

[5]  T. Itoh,et al.  An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique , 2001 .

[6]  Wen Wu,et al.  An Artificial Neural Network-Based Electrothermal Model for GaN HEMTs With Dynamic Trapping Effects Consideration , 2016, IEEE Transactions on Microwave Theory and Techniques.

[7]  M. Cacciola,et al.  Microwave Devices and Antennas Modelling by Support Vector Regression Machines , 2006, IEEE Transactions on Magnetics.

[8]  Anwar H. Jarndal,et al.  Reliable Hybrid Small-Signal Modeling of GaN HEMTs Based on Particle-Swarm-Optimization , 2018, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[9]  Ramakrishna Vetury,et al.  History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond , 2013, IEEE Microwave Magazine.

[10]  N. Jiang,et al.  An Improved Small-Signal Equivalent Circuit for GaN High-Electron Mobility Transistors , 2016, IEEE Electron Device Letters.

[11]  Anwar Jarndal,et al.  A Reliable Model Parameter Extraction Method Applied to AlGaN/GaN HEMTs , 2016, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.