Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation
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P. Boivin | C. Raynaud | C. Plossu | Jean-Luc Autran | J. Autran | C. Raynaud | S. Croci | J. M. Voisin | J. M. Mirabel | S. Croci | C. Plossu | P. Boivin | J. Mirabel | J. Voisin
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