论文信息 - InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 [micro sign]m

InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 [micro sign]m

Microdisk lasers are fabricated in an InP:InGaAs MQW heterostructure transferred onto silicon. The CW room temperature laser operation of such devices at 1.6 /spl mu/m is reported.

[1] A. F. J. Levi,et al. Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers , 1998 .

[2] Masayuki Fujita,et al. Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 /spl mu/A , 2000 .

[3] Kim,et al. Two-dimensional photonic band-Gap defect mode laser , 1999, Science.