论文信息 - 27.2 A1.2μg/√Hz-resolution 0.4μg-bias-instability MEMS silicon oscillating accelerometer with CMOS readout circuit

27.2 A1.2μg/√Hz-resolution 0.4μg-bias-instability MEMS silicon oscillating accelerometer with CMOS readout circuit

Inertial navigation sets a very stringent requirement on the long-term stability of an accelerometer, which is characterized by bias instability. Long-term stability demands a very low-noise design. Accelerometers based on capacitance sensing are the mainstream MEMS accelerometers reported recently [1-3]. The state-of-the-art achieves 1μg bias instability and 2μg/Hz1/2 resolution with a full scale of ±15g [1]. Compared with capacitive accelerometers, a MEMS silicon oscillating accelerometer (SOA) has the advantage of large input dynamic range and has potential to achieve better performance. So far, only a few SOAs with CMOS readout circuits have been reported. Among them, the best performance metrics achieved are 4μg bias instability and 20μg/Hz1/2 resolution [4].

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[7] Yong Ping Xu,et al. A CMOS Readout Circuit for SOI Resonant Accelerometer With 4-$\mu \rm g$ Bias Stability and 20-$ \mu\rm g/\sqrt{{\hbox{Hz}}}$ Resolution , 2008, IEEE Journal of Solid-State Circuits.