MM-wave noise characterization of 40nm CMOS transistor for up to 67 GHz

This noise modelling, characterization and measurement from 0.5 GHz to 67 GHz is reported for the first time in coaxial. RF CMOS devices fabricated on GLOBALFOUNDRIES' 40nm technology are measured with Focus Microwaves noise system for full frequency span of 67 GHz. Experimental results agree well with theoretical and modeling results.

[1]  Roger D. Pollard,et al.  Effects of DUT mismatch on the noise figure characterization: a comparative analysis of two Y-factor techniques , 2002, IEEE Trans. Instrum. Meas..

[2]  K. Aufinger,et al.  A Straightforward Noise De-Embedding Method and its Application to High-Speed Silicon Bipolar Transistors , 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

[3]  Arthur Uhlir,et al.  A Novel Procedure for Receiver Noise Characterization , 1973 .

[4]  M.J. Deen,et al.  An effective gate resistance model for CMOS RF and noise modeling , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[5]  M. Tutt,et al.  Low and high frequency noise properties of heterojunction transistors. , 1994 .

[6]  Keith Jones,et al.  LRM and LRRM Calibrations with Automatic Determination of Load Inductance , 1990, 36th ARFTG Conference Digest.

[7]  R. Q. Lane,et al.  The determination of device noise parameters , 1969 .

[8]  Chenming Hu BSIM model for circuit design using advanced technologies , 2001, 2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185).