Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot

We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon–germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.

[1]  D. DiVincenzo,et al.  Quantum computation with quantum dots , 1997, cond-mat/9701055.

[2]  Bernard S. Meyerson,et al.  Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures , 1995 .

[3]  H. Ahmed,et al.  Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator , 1999 .

[4]  L. Sohn,et al.  Mesoscopic electron transport , 1997 .

[5]  Jeremy Levy.  Quantum-information processing with ferroelectrically coupled quantum dots , 2001 .

[6]  Wei Lu,et al.  Real-time detection of electron tunnelling in a quantum dot , 2003, Nature.

[7]  B. E. Kane.  A silicon-based nuclear spin quantum computer , 1998, Nature.

[8]  Eli Yablonovitch,et al.  Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures , 1999, quant-ph/9905096.

[9]  P. Matagne,et al.  Experiments And Simulations On A Few‐Electron Quantum Dot Circuit With Integrated Charge Read‐Out , 2002, cond-mat/0212489.

[10]  Mark A. Eriksson,et al.  Practical design and simulation of silicon-based quantum-dot qubits , 2003 .

[11]  R. Leoni,et al.  Single-electron transistor based on modulation-doped SiGe heterostructures , 2003 .

[12]  Christopher V. Jahnes,et al.  80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax , 2003 .

[13]  Bernard S. Meyerson,et al.  GATED HALL EFFECT MEASUREMENTS IN HIGH-MOBILITY N-TYPE SI/SIGE MODULATION-DOPED HETEROSTRUCTURES , 1995 .

[14]  R. Schoelkopf,et al.  The radio-frequency single-electron transistor (RF-SET): A fast and ultrasensitive electrometer , 1998, Science.