Effective channel length of submicron MOSFETs: numerical simulation, physical mechanisms, and extraction methods

Device simulations are carried out to study the physical mechanisms underlying the effective channel length of MOSFETs. Furthermore, the adequacy of widely used methods for extracting such a parameter is examined using different free-carrier mobility models implemented in the device simulator. Based on the simulation results, a more consistent and accurate definition for determining the effective channel length is also proposed.