论文信息 - 52.3: High ‐ Power InGaN Blue ‐ Laser Diodes for Displays

52.3: High ‐ Power InGaN Blue ‐ Laser Diodes for Displays

We have developed high power blue laser diodes (LDs) with an emission wavelength of 445 nm by using GaN material. The operating current and voltage of these LDs at an output power of 200mW were 274 mA and 4.9 V, respectively. The estimated lifetime was over 10,000h under 25 °C continuous-wave operation at an output power of 200 mW.

[1] Keiji Sakamoto,et al. GaN-based laser diodes emitting from ultraviolet to blue-green , 2003, SPIE OPTO.

[2] Akira Sakai,et al. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy , 1997 .

[3] Takashi Mukai,et al. Wavelength Dependence of InGaN Laser Diode Characteristics , 2001 .

[4] Robert F. Davis,et al. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy , 1997 .

[5] S. Nakamura,et al. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .

[6] Takunori Taira,et al. Continuous-Wave Deep Blue Generation in a Periodically Poled MgO:LiNbO3 Crystal by Single-Pass Frequency Doubling of a 912-nm Nd:GdVO4 Laser , 2004 .

[7] Takashi Mukai,et al. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates , 2000 .

[8] Yoshinao Kumagai,et al. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors , 2001 .