Structural and optical properties of GaInAs∕GaAs and GaInNAs∕GaNAs multiple quantum wells upon postgrowth annealing

We have investigated structural and optical properties of Ga1−xInxAs∕GaAs and Ga1−xInxNyAs1−y∕GaNzAs1−z multiple quantum wells. The evolution of x-ray diffraction rocking curves during thermal treatment of the samples indicates that there is observable Ga∕In interdiffusion across the heterointerfaces at high sample temperatures. X-ray diffraction also indicates that the diffusion length of the atoms decreases with an increase in nitrogen concentration, while the interface roughness, which exhibits remarkable changes for the two different quantum wells, only plays a minor role in diffusion. Structural stability of the Ga1−xInxNyAs1−y∕GaNzAs1−z quantum wells against temperature variations is better than that of the Ga1−xInxAs∕GaAs quantum wells. These observations can be accounted for by assuming that nitrogen has a tendency to suppress Ga∕In interdiffusion across the heterojunctions.

[1]  K. Ploog,et al.  Influence of interface quality on structural and optical properties of GaxIn1−xAs/AlyIn1−yAs superlattices lattice matched to (001) InP , 1989 .

[2]  Martin D. Dawson,et al.  Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content , 2000 .

[3]  J. Chauveau,et al.  Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy , 2003 .

[4]  G. B. Stringfellow,et al.  Solubility of nitrogen in binary III–V systems , 1997 .

[5]  Takeshi Kitatani,et al.  GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .

[6]  H. F. Liu,et al.  Annealing effects on optical and structural properties of 1.3-μm GaInNAs/GaAs quantum-well samples capped with dielectric layers , 2004 .

[7]  N. Xiang,et al.  Anneal-induced interdiffusion in 1.3-μmGaInNAs∕GaAs quantum well structures grown by molecular-beam epitaxy , 2006 .

[8]  G. Mussler,et al.  Nitrogen-induced suppression of an indium-gallium interdiffusion in InxGa1−xAs1−yNy∕GaAs multiple-quantum wells , 2005 .

[9]  J. Massies,et al.  Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers , 2005 .

[10]  M. Hopkinson,et al.  Concentration dependent interdiffusion in InGaAs∕GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy , 2005 .

[11]  Wolfgang Stolz,et al.  (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen , 2001 .

[12]  A. Guzmán,et al.  Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3–1.5μm applications , 2004 .

[13]  A. Zunger,et al.  Spatial correlations in GaInAsN alloys and their effects on band-gap enhancement and electron localization. , 2001, Physical review letters.

[14]  A. Holmes,et al.  Diffusion mechanisms of indium and nitrogen during the annealing of InGaAs quantum wells with GaNAs barriers and GaAs spacer layers , 2005 .