Characterization and Modeling of High-Frequency Active Devices Oriented to High-Sensitivity Subsystems Design

In this chapter, quite a broad overview of noise characterization-related topics is offered to the reader, with different depth levels. Most of the attention, however, is paid to the practical side of noise measurements and the subsequent steps of noise extraction and modeling, as well as to some advanced design methodologies. A major concern is in the procedures that are necessary to effectively de-embed the measurements from the contribution of the test bench and the adopted methodologies. The scope of the discussion cover a well-assessed theory concerning linear devices operated in the frequency range from a few megahertz to some 100 GHz, and at physical temperatures above some tens of kelvins. In these conditions, 1/f noise can be neglected and Johnson (thermal) noise is approximately independent of frequency; as a consequence, thermal and, possibly, shot noise of elemental noise sources add up to yield a white power spectrum, which can be conveniently described in terms of “equivalent” thermal noise. The second part of the chapter is devoted to the application of the device noise models in the proper design of single- and multistage low noise amplifiers, including a mixed technique that actually employs characterization techniques directly in the amplifier design.