论文信息 - Evaluation of base transit time in ultra-thin carbon-doped base InP/lnGaAs heterojunction bipolar transistors

Evaluation of base transit time in ultra-thin carbon-doped base InP/lnGaAs heterojunction bipolar transistors

Electron transit times in the carbon-doped base of InP/InGaAs heterojunction bipolar transistors (HBTs) are investigated from the current gains. The base layers were heavily doped to 2.5/spl times/10/sup 19/ cm/sup -3/ and the thicknesses W/sub B/ were varied from 50 to 1300 /spl Aring/. The estimated base transit time /spl tau//sub B/ shows linear dependence on W/sub B/ when W/sub B/ is smaller than 150 /spl Aring/, whereas it has quadratic dependence on W/sub B/ above this value. The linear behaviour of /spl tau//sub B/ on W/sub B/ is evidence of dominant ballistic electron transport in the ultra-thin base layer of InP/InGaAs HBTs.

Hiroshi Ito | K. Kurishima | S. Yamahata

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