Power handling and linearity of MEM capacitive series switches

This paper presents the power handling and linearity of a capacitive series MEMS switch. The switching time as a function of incident RF power is also discussed. The MIT Lincoln Laboratory series capacitive MEMS switch handled nearly 10 Watts of RF power under cold switching conditions and up to 1.7 Watts of RF power under hot switching conditions. The power handling is a function of the pull-down voltage of the switch and the frequency of the RF signal.

[1]  S. Duffy,et al.  MEMS microswitches for reconfigurable microwave circuitry , 2001, IEEE Microwave and Wireless Components Letters.

[2]  Peter M. Osterberg,et al.  Calculating electromagnetic force and energy using singularity functions , 2002, IEEE Antennas and Propagation Society International Symposium (IEEE Cat. No.02CH37313).

[3]  S. Eshelman,et al.  Performance of low-loss RF MEMS capacitive switches , 1998 .

[4]  J. L. Watkins,et al.  Conductive Sphere in a Radio Frequency Field: Theory and Applications to Positioners, Heating, and Noncontact Measurements , 1996 .

[5]  Gabriel M. Rebeiz,et al.  Nonlinear electro-mechanical modeling of MEMS switches , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[6]  L.P.B. Katehi,et al.  A study of thermal effects in RF-MEM-switches using a time domain approach , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).