Stochastic scattering in charged particle projection systems: A nearest neighbor approach

Image blurring as a result of stochastic particle–particle interactions has been investigated for projection electron‐ and ion‐beam lithography systems. A comparative analysis of the currently available analytical theories is presented. The results from these theories are also compared with Monte Carlo simulation results and experimental data. Large variations in results and serious disagreements between the different theoretical approaches are found. We have formulated a new theory on the basis of a simple, analytical approach that overcomes most of the difficulties experienced by earlier theories with two key concepts: consideration of nearest‐neighbor interactions only, and a randomization length, over which the interactions are correlated. Our model displays satisfactory functional and numerical agreement with Monte Carlo simulation results over a large range of beam currents, as well as with the only available experimental data. The physical basis of our model also enables us to understand the origin...

[1]  John L. Sturtevant,et al.  Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist , 1992, Advanced Lithography.

[2]  B. Lischke,et al.  Aligned multilayer structure generation by electron microprojection , 1979 .

[3]  K. Valiev,et al.  The physics of submicron lithography , 1992 .

[4]  Hiroyasu Shimizu,et al.  Computer simulation for a large‐field electron‐beam‐reducing image projector , 1993 .

[5]  Reginald C. Farrow,et al.  Particle–particle interaction effects in image projection lithography systems , 1993 .

[6]  Shinji Okazaki,et al.  Electron-beam cell projection lithography: A new high-throughput electron-beam direct-writing technology using a specially tailored Si aperture , 1990 .

[7]  I. Berry,et al.  Experimental investigation of stochastic space charge effects on pattern resolution in ion projection lithography systems , 1994 .

[8]  C. G. Willson,et al.  Introduction to microlithography , 1994 .

[10]  Reginald C. Farrow,et al.  Projection electron-beam lithography: A new approach , 1991 .

[11]  H. C. Pfeiffer,et al.  Advanced deflection concept for large area, high resolution e-beam lithography , 1981 .

[12]  Lloyd R. Harriott,et al.  An analytical model of stochastic interaction effects in projection systems using a nearest‐neighbor approach , 1994 .

[13]  A. Broers.  The Clifford Paterson Lecture, 1986 - Limits of thin-film microfabrication , 1988, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.

[14]  Michel K. Ochi,et al.  Applied probability and stochastic processes in engineering and physical sciences , 1990 .

[15]  Harald Bohlen,et al.  Electron beam proximity printing: Complementary‐mask and level‐to‐level overlay with high accuracy , 1985 .

[16]  Takayuki Asai,et al.  1: 4 Demagnifying Electron Projection System , 1980 .

[17]  Lloyd R. Harriott,et al.  Ion projection: the successor to optical lithography , 1994, Advanced Lithography.

[18]  H. C. Pfeiffer.  Variable spot shaping for electron‐beam lithography , 1978 .

[19]  G. H. Jansen.  Coulomb interactions in particle beams , 1988 .

[20]  J. A. Liddle,et al.  Choice of system parameters for projection electron‐beam lithography: Accelerating voltage and demagnification factor , 1992 .

[21]  H. Koops.  On Electron Projection Systems , 1973 .

[22]  H. Goldstein,et al.  Classical Mechanics , 1951, Mathematical Gazette.

[23]  J. M. Gibson,et al.  New approach to projection-electron lithography with demonstrated 0.1 μm linewidth , 1990 .

[24]  Reginald C. Farrow,et al.  Alignment and registration schemes for projection electron lithography , 1991 .

[25]  M. Kozicki,et al.  Nanostructure Physics and Fabrication , 1989 .

[26]  James Alexander Liddle,et al.  Mask fabrication for projection electron-beam lithography incorporating the SCALPEL technique , 1991 .