High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control

We investigate the interface control for very long wavelength infrared InAs/GaSb superlattice (SL) structures. An InAs/GaSb SL photodetector with very high structural quality has been demonstrated by precisely controlling the Sb-soak, the growth stop time and the InSb layer thickness at the interfaces. The full width at half maximum of the X-ray diffraction satellite peaks of a p-i-n device structure is only 21 arcsec. The 50% cutoff wavelength of the detector is 14.5 μm at 77 K. At 14.5 μm, the quantum efficiency is 14%, while at the photoresponse maximum position of 7.7 μm it is 50%.

[1]  Gabby Sarusi,et al.  Design and performance of very long-wavelength GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors , 1994 .

[2]  O. Brandt,et al.  Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy , 1996 .

[3]  Hooman Mohseni,et al.  Very long wavelength infrared type-II detectors operating at 80 K , 2000 .

[4]  Hooman Mohseni,et al.  High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range , 2001 .

[5]  Yajun Wei,et al.  Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm , 2002 .

[6]  Yajun Wei,et al.  Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications , 2002 .

[7]  Manijeh Razeghi,et al.  On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared , 2005 .

[8]  J. B. Rodriguez,et al.  MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection , 2005 .

[9]  V. A. Solov'ev,et al.  Room-temperature 3.9-4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix , 2005 .

[10]  Antoni Rogalski,et al.  Material considerations for third generation infrared photon detectors , 2007 .

[11]  Meimei Z. Tidrow,et al.  The effect of doping the M-barrier in very long-wave type-II InAs /GaSb heterodiodes , 2008 .

[12]  Elena Plis,et al.  Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes , 2008 .

[13]  Eric Tournié,et al.  Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy , 2010 .

[14]  Kai Cui,et al.  Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors With InSb-Like and Mixed Interfaces , 2011, IEEE Journal of Quantum Electronics.

[15]  K. Cui,et al.  Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers , 2011 .

[16]  Gail J. Brown,et al.  Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices , 2011 .