A novel technology for turn-on voltage reduction of high-performance lateral heterojunction diode with source-gate shorted anode

Abstract A novel lateral heterojunction diode with a low turn-on voltage is proposed in this paper. Verified by theoretical analysis and simulations, it is partially relaxed InGaN channel that maintains the 2DEG under the recessed gate leading to a huge turn-on voltage reduction (by ∼39% maximum) and a low influence on BV, suggesting that the device owns a good potential in power applications such as bridge rectifier and wireless power transmission.

[1]  Kevin J. Chen,et al.  Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices , 2018, IEEE Transactions on Electron Devices.

[2]  James S. Speck,et al.  POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY , 1999 .

[3]  Jacek A. Majewski,et al.  Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures , 2002 .

[4]  M. J. Reed,et al.  Critical layer thickness determination of GaN/InGaN/GaN double heterostructures , 2000 .

[5]  Fangzhou Wang,et al.  Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate , 2018 .

[6]  Shu Yang,et al.  Dynamic Gate Stress-Induced $V_{\text {TH}}$ Shift and Its Impact on Dynamic $R_{\mathrm {ON}}$ in GaN MIS-HEMTs , 2016, IEEE Electron Device Letters.

[7]  U. Mishra,et al.  AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.

[8]  Sen Huang,et al.  Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking , 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[9]  Shu Yang,et al.  AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs , 2015, IEEE Transactions on Electron Devices.

[10]  Fangzhou Wang,et al.  Simulation study of high-reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode , 2017 .

[11]  K. Nakajima.  Equilibrium Phase Diagrams for Stranski-Krastanov Structure Mode of III–V Ternary Quantum Dots , 1999 .

[12]  Shu Yang,et al.  Trapping mechanisms in insulated‐gate GaN power devices: Understanding and characterization techniques , 2017 .

[13]  Wanjun Chen,et al.  HEMT-compatible lateral field-effect rectifier using CF4 plasma treatment , 2009 .

[14]  Lei Yang,et al.  Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage , 2018 .

[15]  King-Yuen Wong,et al.  Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT , 2009, IEEE Electron Device Letters.

[16]  Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states , 2018, Japanese Journal of Applied Physics.

[17]  Zhibiao Hao,et al.  Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN , 2011 .

[18]  Bo Zhang,et al.  Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate , 2018, Superlattices and Microstructures.

[19]  Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode , 2017 .