论文信息 - Smooth and vertical-sidewall InP etching using Cl2/N2 inductively coupled plasma

Smooth and vertical-sidewall InP etching using Cl2/N2 inductively coupled plasma

Inductively coupled plasma (ICP) operated in the reactive-ion etching mode is used for mesa etching of InP using Cl2/N2 chemistry with a Ni metal mask. Etch rates of approximately 140 nm/min with very smooth and vertical sidewalls are obtained at a dc bias of 120 V. The effects of temperature, gas flow, chamber pressure, ICP source power, and substrate bias power on etch rate are studied; sidewall profile and surface morphology will be discussed.

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