Metal-Induced Surface States During Schottky-Barrier Formation on Si, Ge, and Gaas

Evidence is reported for extrinsic metal-induced surface states during the early stages of Schottky-barrier formation on Si(111), GaAs(anti 1 anti 1 anti 1), Ge(111), and Ge(100). Results on Ge(110) are related to those of Eastman and Freeouf (1975) for GaAs(110) and GaSb(110). A simple structural model is proposed to account for the anomalous results on (110) semiconductor surfaces. (WDM)