论文信息 - A low-voltage mixed-mode CMOS/SOI integrated circuit for 13.56 MHz RFID applications

A low-voltage mixed-mode CMOS/SOI integrated circuit for 13.56 MHz RFID applications

A low-voltage mixed-mode CMOS/SOI integrated circuit for 13.56 MHz RFID applications is presented. When connected to an external inductive loop antenna and put in a reader magnetic field, the chip is remote powered. Nominal supply voltage lowering down to 1.2 V (digital part) and 1.5 V (analog part) was achieved using a 0.25 /spl mu/m partially-depleted CMOS/SOI technology. Device level simulations were done with the LETISOI model. Measurements proved the chip functionality and the suitability of the technology for lower voltages. To our knowledge, it is the first mixed-mode CMOS/SOI chip dedicated to RFID.

[1] O. Faynot,et al. Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI , 2001 .

[2] Chenming Hu,et al. A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[3] O. Faynot,et al. CMOS/SOI technologies for low-power and low-voltage circuits , 1999 .