Thermal Network Parameter Extracting Method for Press-Pack IGBT Junction Temperature

With the reliability evaluation background of power electronics devices, the one-dimensional thermal network method was studied to obtain the operating junction temperature of press-pack IGBT (insulated gate bipolar transistor) devices. Based on the Cauer model, an improved method was proposed for the extraction of radiator parameters and heat conductivity area equivalent factor. The IGBT module branch was simplified into a one-dimensional geometric model through assumed conditions. The theoretical basis of radiator parameter extraction was explained as well as the fitting expression of heat conductivity area equivalent factor was obtained. Finally, the proposed method was compared with the finite element method. The results show that the proposed parameter extraction method can calculate fast and accurately.