Two-dimensional silicon oxidation experiments and theory

The effect of stress on the growth rate in 2-D Si oxidation has been clearly observed and characterized. It will be quantitatively demonstrated that the oxidation of curved Si surfaces is retarded by the stress associated with the nonplanar viscous deformation of the oxide, and that the retardation is more severe on concave structures than on convex structures. This result is based on an unique experimental approach in which extensive data was collected on the oxidation of cylindrical silicon structures of controlled radii of curvature. A theoretical model is developed based on the premise that the viscous stress normal to the Si surface is responsible for the retarded oxide growth, and that the stress in the bulk of the oxide is responsible for the difference between concave and convex structures.