Analytical charge control model for AlGaN/GaN MIS-HFETs including an undepleted barrier layer

An analytical charge control model considering the insulator/AlGaN interface charge and undepleted Al- GaN barrier layer is presented for AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) over the entire operation range of gate voltage. The whole process of charge control is analyzed in detail and partitioned into four regions: I—full depletion, II—partial depletion, III—neutral region and IV—electron accu- mulation at the insulator/AlGaN interface. The results show that two-dimensional electron gas (2DEG) saturates at the boundary of region II/III and the gate voltage should not exceed the 2DEG saturation voltage in order to keep the channel in control. In addition, the span of region II accounts for about 50% of the range of gate voltage before 2DEG saturates. The good agreement of the calculated transfer characteristic with the measured data confirms the validity of the proposed model.

[1]  M.A. Aziz,et al.  Theoretical Study of The Charge Control in AlGaN/GaN HEMTs , 2006, Proceedings of the Twenty Third National Radio Science Conference (NRSC'2006).

[2]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .

[3]  N. Dasgupta,et al.  A simple analytical model for gate capacitance-voltage characteristics of HEMTs , 1994 .

[4]  Jacek A. Majewski,et al.  Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures , 2002 .

[5]  Wei Mao,et al.  AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition , 2008, IEEE Electron Device Letters.

[6]  M. El Nokali,et al.  An analytical model for high electron mobility transistors , 1994 .

[7]  D. Gregušová,et al.  AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide , 2007 .

[8]  Toshiki Makimoto,et al.  Insulator engineering in GaN-based MIS HFETs , 2007, SPIE OPTO.

[9]  R. Gupta,et al.  Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications , 2008 .

[10]  Ma Xiaohua,et al.  Development and characteristics analysis of recessed-gate MOS HEMT , 2009 .

[11]  R. Dimitrov,et al.  Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures , 2000 .

[12]  H. Morkoc,et al.  Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization , 1984, IEEE Transactions on Electron Devices.

[13]  Zhang Jincheng,et al.  GaN MOS-HEMT Using Ultra-Thin Al 2 O 3 Dielectric Grown by Atomic Layer Deposition , 2007 .

[14]  W.H. Ku,et al.  An analytical and computer-aided model of the AlGaAs/GaAs high electron mobility transistor , 1986, IEEE Transactions on Electron Devices.