Modeling and simulation of spiking neural networks with resistive switching synapses
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[1] Sumio Hosaka,et al. Associative memory realized by a reconfigurable memristive Hopfield neural network , 2015, Nature Communications.
[2] Farnood Merrikh-Bayat,et al. Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors , 2015, Scientific Reports.
[3] Simone Balatti,et al. A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems , 2015, Front. Neurosci..
[4] Z. Wei,et al. True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[5] Tara N. Sainath,et al. Deep Neural Networks for Acoustic Modeling in Speech Recognition , 2012 .
[6] Wolfgang Maass,et al. To Spike or Not to Spike: That Is the Question , 2015, Proc. IEEE.
[7] K. Gopalakrishnan,et al. Phase change memory technology , 2010, 1001.1164.
[8] Chiara Bartolozzi,et al. Neuromorphic Electronic Circuits for Building Autonomous Cognitive Systems , 2014, Proceedings of the IEEE.
[9] Jian Sun,et al. Delving Deep into Rectifiers: Surpassing Human-Level Performance on ImageNet Classification , 2015, 2015 IEEE International Conference on Computer Vision (ICCV).
[10] Peng Huang,et al. Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing , 2017, IEEE Transactions on Electron Devices.
[11] Daniele Ielmini,et al. Brain-Inspired Memristive Neural Networks for Unsupervised Learning , 2019, Handbook of Memristor Networks.
[12] Vittorio Dante,et al. A VLSI recurrent network of integrate-and-fire neurons connected by plastic synapses with long-term memory , 2003, IEEE Trans. Neural Networks.
[13] Alessandro Calderoni,et al. Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability , 2014, IEEE Transactions on Electron Devices.
[14] E. Vianello,et al. Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting , 2016, Frontiers in neuroscience.
[15] Suman Datta,et al. The era of hyper-scaling in electronics , 2018, Nature Electronics.
[16] Giacomo Indiveri,et al. Emergent Auditory Feature Tuning in a Real-Time Neuromorphic VLSI System , 2011, Front. Neurosci..
[17] Giacomo Indiveri,et al. Real-Time Classification of Complex Patterns Using Spike-Based Learning in Neuromorphic VLSI , 2009, IEEE Transactions on Biomedical Circuits and Systems.
[18] Massimiliano Di Ventra,et al. The parallel approach , 2013 .
[19] Themis Prodromakis,et al. Analog Memristive Synapse in Spiking Networks Implementing Unsupervised Learning , 2016, Front. Neurosci..
[20] Ya-Chin King,et al. A Contact-Resistive Random-Access-Memory-Based True Random Number Generator , 2012, IEEE Electron Device Letters.
[21] Shimeng Yu,et al. A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation , 2013, Advanced materials.
[22] Chung Lam,et al. Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array , 2014, Front. Neurosci..
[23] Peng Lin,et al. Fully memristive neural networks for pattern classification with unsupervised learning , 2018 .
[24] Giacomo Indiveri,et al. A reconfigurable on-line learning spiking neuromorphic processor comprising 256 neurons and 128K synapses , 2015, Front. Neurosci..
[25] Andrew Steane,et al. Fast quantum logic gates with trapped-ion qubits , 2017, Nature.
[26] Gert Cauwenberghs,et al. Neuromorphic Silicon Neuron Circuits , 2011, Front. Neurosci.
[27] Demis Hassabis,et al. Mastering the game of Go with deep neural networks and tree search , 2016, Nature.
[28] H. Shouval. What is the appropriate description level for synaptic plasticity? , 2011, Proceedings of the National Academy of Sciences of the United States of America.
[29] Shimeng Yu,et al. Low-Energy Robust Neuromorphic Computation Using Synaptic Devices , 2012, IEEE Transactions on Electron Devices.
[30] J. Cirac,et al. Room-Temperature Quantum Bit Memory Exceeding One Second , 2012, Science.
[31] Ralph,et al. Current-induced switching of domains in magnetic multilayer devices , 1999, Science.
[32] Daniele Ielmini,et al. Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks , 2018, 2018 IEEE International Symposium on Circuits and Systems (ISCAS).
[33] D. Querlioz,et al. Visual Pattern Extraction Using Energy-Efficient “2-PCM Synapse” Neuromorphic Architecture , 2012, IEEE Transactions on Electron Devices.
[34] Pritish Narayanan,et al. Equivalent-accuracy accelerated neural-network training using analogue memory , 2018, Nature.
[35] S. Ambrogio,et al. Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches , 2014, IEEE Transactions on Electron Devices.
[36] D. Ielmini,et al. Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth , 2011, IEEE Transactions on Electron Devices.
[37] Masahide Matsumoto,et al. A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
[38] Alessandro Calderoni,et al. Understanding pulsed-cycling variability and endurance in HfOx RRAM , 2015, 2015 IEEE International Reliability Physics Symposium.
[39] Shimeng Yu,et al. Neuro-Inspired Computing With Emerging Nonvolatile Memorys , 2018, Proceedings of the IEEE.
[40] L. Goux,et al. Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories , 2015, IEEE Electron Device Letters.
[41] Haralampos Pozidis,et al. Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperatures , 2015, 2015 IEEE International Reliability Physics Symposium.
[42] Philip R. Hemmer,et al. Nitrogen-vacancy centers: Physics and applications , 2013 .
[43] Mirko Hansen,et al. Memristive Hebbian Plasticity Model: Device Requirements for the Emulation of Hebbian Plasticity Based on Memristive Devices , 2015, IEEE Transactions on Biomedical Circuits and Systems.
[44] C. Wright,et al. Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices , 2013 .
[45] Stefano Ambrogio,et al. Normally-off Logic Based on Resistive Switches—Part II: Logic Circuits , 2015, IEEE Transactions on Electron Devices.
[46] D. Ielmini,et al. Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory , 2009, IEEE Transactions on Electron Devices.
[47] J. Preskill. Quantum computing: pro and con , 1997, Proceedings of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.
[48] Jiaming Zhang,et al. Analogue signal and image processing with large memristor crossbars , 2017, Nature Electronics.
[49] Bing Chen,et al. Efficient in-memory computing architecture based on crossbar arrays , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).
[50] Stefano Ambrogio,et al. Neuromorphic computing with hybrid memristive/CMOS synapses for real-time learning , 2016, 2016 IEEE International Symposium on Circuits and Systems (ISCAS).
[51] R. Douglas,et al. A silicon neuron , 1991, Nature.
[52] L. Abbott,et al. Synaptic plasticity: taming the beast , 2000, Nature Neuroscience.
[53] Matthew Cook,et al. Unsupervised learning of digit recognition using spike-timing-dependent plasticity , 2015, Front. Comput. Neurosci..
[54] J. Knott. The organization of behavior: A neuropsychological theory , 1951 .
[55] Chiara Bartolozzi,et al. Synaptic Dynamics in Analog VLSI , 2007, Neural Computation.
[56] T. Serrano-Gotarredona,et al. STDP and STDP variations with memristors for spiking neuromorphic learning systems , 2013, Front. Neurosci..
[57] D. Ielmini,et al. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.
[58] Wolfgang Maass,et al. Noise as a Resource for Computation and Learning in Networks of Spiking Neurons , 2014, Proceedings of the IEEE.
[59] Haralampos Pozidis,et al. Multilevel-Cell Phase-Change Memory: A Viable Technology , 2016, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.
[60] Kinam Kim,et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.
[61] Ralph,et al. Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars , 1999, Physical review letters.
[62] Byoungil Lee,et al. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. , 2012, Nano letters.
[63] R. Hanson,et al. Diamond NV centers for quantum computing and quantum networks , 2013 .
[64] Adrian M. Ionescu,et al. Tunnel field-effect transistors as energy-efficient electronic switches , 2011, Nature.
[65] E. Bakkers,et al. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices , 2012, Science.
[66] Fatemeh Hadaeghi. Neuromorphic Electronic Systems for Reservoir Computing , 2019, ArXiv.
[67] R. Stanley Williams. What's Next? , 2017, Computing in Science & Engineering.
[68] J. Bass,et al. Excitation of a magnetic multilayer by an electric current , 1998 .
[69] Giacomo Indiveri,et al. Synthesizing cognition in neuromorphic electronic systems , 2013, Proceedings of the National Academy of Sciences.
[70] D. Ielmini,et al. Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-time unsupervised machine learning , 2016, 2016 IEEE Symposium on VLSI Technology.
[71] S. Yuasa,et al. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions , 2004, Nature materials.
[72] Tao Wang,et al. Deep learning with COTS HPC systems , 2013, ICML.
[73] David A. Patterson,et al. In-datacenter performance analysis of a tensor processing unit , 2017, 2017 ACM/IEEE 44th Annual International Symposium on Computer Architecture (ISCA).
[74] T. Yamamoto,et al. Low-power embedded ReRAM technology for IoT applications , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).
[75] W. Pitts,et al. A Logical Calculus of the Ideas Immanent in Nervous Activity (1943) , 2021, Ideas That Created the Future.
[76] C. Teuscher,et al. Modeling and Experimental Demonstration of a Hopfield Network Analog-to-Digital Converter with Hybrid CMOS/Memristor Circuits , 2015, Front. Neurosci..
[77] M. Wilson,et al. NMDA receptors, place cells and hippocampal spatial memory , 2004, Nature Reviews Neuroscience.
[78] D. Ielmini,et al. Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.
[79] J Joshua Yang,et al. Memristive devices for computing. , 2013, Nature nanotechnology.
[80] Jeong-Heon Park,et al. Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory , 2016, IEEE Magnetics Letters.
[81] A. Sawa. Resistive switching in transition metal oxides , 2008 .
[82] S. O. Park,et al. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[83] Xiang Fu,et al. The engineering challenges in quantum computing , 2017, Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017.
[84] D. Ielmini,et al. Demonstration of hybrid CMOS/RRAM neural networks with spike time/rate-dependent plasticity , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[85] Bing Chen,et al. A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation , 2014, IEEE Electron Device Letters.
[86] R. Feynman. Simulating physics with computers , 1999 .
[87] J. Yang,et al. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. , 2017, Nature materials.
[88] Alessandro Calderoni,et al. Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices , 2016, IEEE Transactions on Electron Devices.
[89] H.-S. Philip Wong,et al. Face classification using electronic synapses , 2017, Nature Communications.
[90] Ming Yang,et al. DeepFace: Closing the Gap to Human-Level Performance in Face Verification , 2014, 2014 IEEE Conference on Computer Vision and Pattern Recognition.
[91] M. Kozicki,et al. Nanoscale memory elements based on solid-state electrolytes , 2005, IEEE Transactions on Nanotechnology.
[92] Tanja Lange,et al. Post-quantum cryptography , 2008, Nature.
[93] Abu Sebastian,et al. Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices , 2015, IEEE Electron Device Letters.
[94] N. Linke,et al. High-Fidelity Quantum Logic Gates Using Trapped-Ion Hyperfine Qubits. , 2015, Physical review letters.
[95] Daisuke Saida,et al. Sub-3 ns pulse with sub-100 µA switching of 1x–2x nm perpendicular MTJ for high-performance embedded STT-MRAM towards sub-20 nm CMOS , 2016, 2016 IEEE Symposium on VLSI Technology.
[96] Steve Furber,et al. Large-scale neuromorphic computing systems , 2016, Journal of neural engineering.
[97] John J. Hopfield,et al. Searching for Memories, Sudoku, Implicit Check Bits, and the Iterative Use of Not-Always-Correct Rapid Neural Computation , 2006, Neural Computation.
[98] J. J. Hopfield,et al. “Neural” computation of decisions in optimization problems , 1985, Biological Cybernetics.
[99] G.E. Moore,et al. Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.
[100] John Preskill,et al. Quantum Computing in the NISQ era and beyond , 2018, Quantum.
[101] R. Jordan,et al. NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).
[102] M. Julliere. Tunneling between ferromagnetic films , 1975 .
[103] A. Sebastian,et al. Drift-resilient cell-state metric for multilevel phase-change memory , 2011, 2011 International Electron Devices Meeting.
[104] H.-S. Philip Wong,et al. Phase-Change Memory—Towards a Storage-Class Memory , 2017, IEEE Transactions on Electron Devices.
[105] Daniele Ielmini,et al. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling , 2016 .
[106] Zhiwei Li,et al. Binary neural network with 16 Mb RRAM macro chip for classification and online training , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[107] M. Kozicki,et al. Electrochemical metallization memories—fundamentals, applications, prospects , 2011, Nanotechnology.
[108] H. Hwang,et al. Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[109] Richard George,et al. Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons , 2018, Journal of Physics D: Applied Physics.
[110] Gert Cauwenberghs,et al. Log-Domain Time-Multiplexed Realization of Dynamical Conductance-Based Synapses , 2010, Proceedings of 2010 IEEE International Symposium on Circuits and Systems.
[111] W. Oliver,et al. Materials in superconducting quantum bits , 2013 .
[112] Alessandro Calderoni,et al. Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM , 2016, IEEE Transactions on Electron Devices.
[113] K. J. Kuhn,et al. Considerations for Ultimate CMOS Scaling , 2012, IEEE Transactions on Electron Devices.
[114] H.-S. Philip Wong,et al. In-memory computing with resistive switching devices , 2018, Nature Electronics.
[115] J.V. Arthur,et al. Recurrently connected silicon neurons with active dendrites for one-shot learning , 2004 .
[116] Dashan Shang,et al. Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes , 2009 .
[117] Giacomo Indiveri,et al. A VLSI array of low-power spiking neurons and bistable synapses with spike-timing dependent plasticity , 2006, IEEE Transactions on Neural Networks.
[118] Lov K. Grover. A fast quantum mechanical algorithm for database search , 1996, STOC '96.
[119] M. Mitchell Waldrop,et al. The chips are down for Moore’s law , 2016, Nature.
[120] Mirko Hansen,et al. Double-Barrier Memristive Devices for Unsupervised Learning and Pattern Recognition , 2017, Front. Neurosci..
[121] Zheng-Hua Tan,et al. Pavlovian conditioning demonstrated with neuromorphic memristive devices , 2017, Scientific Reports.
[122] A. Fert,et al. The emergence of spin electronics in data storage. , 2007, Nature materials.
[123] Shimeng Yu,et al. Synaptic electronics: materials, devices and applications , 2013, Nanotechnology.
[124] Yong Liu,et al. A 45nm CMOS neuromorphic chip with a scalable architecture for learning in networks of spiking neurons , 2011, 2011 IEEE Custom Integrated Circuits Conference (CICC).
[125] Demis Hassabis,et al. Mastering the game of Go without human knowledge , 2017, Nature.
[126] Rodrigo Alvarez-Icaza,et al. Neurogrid: A Mixed-Analog-Digital Multichip System for Large-Scale Neural Simulations , 2014, Proceedings of the IEEE.
[127] Ilia Valov,et al. Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale , 2014 .
[128] A. Pirovano,et al. Scaling analysis of phase-change memory technology , 2003, IEEE International Electron Devices Meeting 2003.
[129] S. Datta,et al. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. , 2008, Nano letters.
[130] Misha A. Mahowald,et al. An Analog VLSI System for Stereoscopic Vision , 1994 .
[131] Olivier Bichler,et al. Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction , 2011, 2011 International Electron Devices Meeting.
[132] V. Cros,et al. Spin-torque building blocks. , 2014, Nature Materials.
[133] Duane Mills,et al. 19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[134] Andrew D Kent,et al. A new spin on magnetic memories. , 2015, Nature nanotechnology.
[135] Yu-Fen Wang,et al. Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device , 2015, Scientific Reports.
[136] M. Ziegler,et al. An Electronic Version of Pavlov's Dog , 2012 .
[137] S. Ambrogio,et al. Spike-timing dependent plasticity in a transistor-selected resistive switching memory , 2013, Nanotechnology.
[138] Massimiliano Giulioni,et al. Real time unsupervised learning of visual stimuli in neuromorphic VLSI systems , 2015, Scientific Reports.
[139] H. Hwang,et al. Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures , 2008 .
[140] Chung-Wei Hsu,et al. Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory , 2014, Nanotechnology.
[141] H. Hwang,et al. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device , 2011, Nanotechnology.
[142] Shimeng Yu,et al. Metal–Oxide RRAM , 2012, Proceedings of the IEEE.
[143] S. Seo,et al. Reproducible resistance switching in polycrystalline NiO films , 2004 .
[144] Mu-ming Poo,et al. Andrew Chi-Chih Yao: the future of quantum computing , 2018 .
[145] Timothée Masquelier,et al. Unsupervised Learning of Visual Features through Spike Timing Dependent Plasticity , 2007, PLoS Comput. Biol..
[146] H.-S. Philip Wong,et al. Phase Change Memory , 2010, Proceedings of the IEEE.
[147] M. Kozicki,et al. Low current resistive switching in Cu–SiO2 cells , 2008 .
[148] Daniele Ielmini,et al. Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications , 2017, Journal of Computational Electronics.
[149] Chang Jung Kim,et al. Physical electro-thermal model of resistive switching in bi-layered resistance-change memory , 2013, Scientific Reports.
[150] B. Frey,et al. The human splicing code reveals new insights into the genetic determinants of disease , 2015, Science.
[151] D. Ielmini,et al. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation , 2007, 2007 IEEE International Electron Devices Meeting.
[152] Shimeng Yu,et al. A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling , 2012, 2012 International Electron Devices Meeting.
[153] Masakazu Aono,et al. Ultra‐Low Voltage and Ultra‐Low Power Consumption Nonvolatile Operation of a Three‐Terminal Atomic Switch , 2015, Advanced materials.
[154] Yoon-Ha Jeong,et al. Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems , 2015, IEEE Electron Device Letters.
[155] Andreas Stolcke,et al. The Microsoft 2017 Conversational Speech Recognition System , 2017, 2018 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP).
[156] Daniele Ielmini,et al. Brain-inspired recurrent neural network with plastic RRAM synapses , 2018, 2018 IEEE International Symposium on Circuits and Systems (ISCAS).
[157] W. Gerstner,et al. Triplets of Spikes in a Model of Spike Timing-Dependent Plasticity , 2006, The Journal of Neuroscience.
[158] Gennadi Bersuker,et al. A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis , 2014, IEEE Transactions on Electron Devices.
[159] G. W. Burr,et al. Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element , 2015, 2014 IEEE International Electron Devices Meeting.
[160] Max G. Lagally,et al. Semiconductor quantum dot qubits , 2013 .
[161] J. C. Sloncxewski. Current-driven excitation of magnetic multilayers , 2003 .
[162] Giacomo Indiveri,et al. Integration of nanoscale memristor synapses in neuromorphic computing architectures , 2013, Nanotechnology.
[163] Stefano Ambrogio,et al. True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices , 2015, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.
[164] Geoffrey E. Hinton,et al. Learning representations by back-propagating errors , 1986, Nature.
[165] Frederick T. Chen,et al. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM , 2008, 2008 IEEE International Electron Devices Meeting.
[166] Alessandro Calderoni,et al. Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory , 2016, IEEE Transactions on Electron Devices.
[167] Ali Khiat,et al. Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses , 2016, Nature Communications.
[168] Dominique Vuillaume,et al. Filamentary switching: synaptic plasticity through device volatility. , 2015, ACS nano.
[169] Mark Horowitz,et al. 1.1 Computing's energy problem (and what we can do about it) , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[170] D. Ielmini,et al. Logic Computation in Phase Change Materials by Threshold and Memory Switching , 2013, Advanced materials.
[171] Shimeng Yu,et al. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation , 2011, IEEE Transactions on Electron Devices.
[172] Mostafa Rahimi Azghadi,et al. Modeling triplet spike-timing-dependent plasticity using memristive devices , 2017 .
[173] Andrew S. Cassidy,et al. A million spiking-neuron integrated circuit with a scalable communication network and interface , 2014, Science.
[174] Shimeng Yu,et al. Emerging Memory Technologies: Recent Trends and Prospects , 2016, IEEE Solid-State Circuits Magazine.
[175] John J. Hopfield,et al. Neural networks and physical systems with emergent collective computational abilities , 1999 .
[176] Jason Weston,et al. Natural Language Processing (Almost) from Scratch , 2011, J. Mach. Learn. Res..
[177] Patrick Camilleri,et al. Robust Working Memory in an Asynchronously Spiking Neural Network Realized with Neuromorphic VLSI , 2011, Frontiers in Neuroscience.
[178] Wei D. Lu,et al. Pattern recognition with memristor networks , 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).
[179] M. Pickett,et al. A scalable neuristor built with Mott memristors. , 2013, Nature materials.
[180] A. Calderoni,et al. Performance comparison of O-based and Cu-based ReRAM for high-density applications , 2014, 2014 IEEE 6th International Memory Workshop (IMW).
[181] Alessandro Calderoni,et al. Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory , 2015, IEEE Transactions on Electron Devices.
[182] Guigang Zhang,et al. Deep Learning , 2016, Int. J. Semantic Comput..
[183] Wei Lu,et al. The future of electronics based on memristive systems , 2018, Nature Electronics.
[184] Alex Krizhevsky,et al. Learning Multiple Layers of Features from Tiny Images , 2009 .
[185] E. Bienenstock,et al. Theory for the development of neuron selectivity: orientation specificity and binocular interaction in visual cortex , 1982, The Journal of neuroscience : the official journal of the Society for Neuroscience.
[186] Alessandro Calderoni,et al. Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses , 2018, Science Advances.
[187] Thomas P. Parnell,et al. Temporal correlation detection using computational phase-change memory , 2017, Nature Communications.
[188] Paolo Fantini,et al. Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses , 2016, Front. Neurosci..
[189] Massimiliano Di Ventra,et al. Experimental demonstration of associative memory with memristive neural networks , 2009, Neural Networks.
[190] D. Ielmini,et al. Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM , 2013, IEEE Electron Device Letters.
[191] N. Lindner,et al. Topological Quantum Computation—From Basic Concepts to First Experiments , 2013, Science.
[192] M. Bear,et al. This paper was presented at a colloquium entitled ‘ ‘ Memory : Recording Experience in Cells and Circuits , ’ ’ organized by , 1996 .
[193] B. Babkin. Conditioned Reflexes; an Investigation of the Physiological Activity of the Cerebral Cortex. , 1929 .
[194] D. Ielmini,et al. Modeling-based design of brain-inspired spiking neural networks with RRAM learning synapses , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).
[195] Hermann Kohlstedt,et al. A memristive plasticity model of voltage-based STDP suitable for recurrent bidirectional neural networks in the hippocampus , 2018, Scientific Reports.
[196] Christopher D. Manning,et al. Advances in natural language processing , 2015, Science.
[197] S. Balatti,et al. Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling , 2012, IEEE Transactions on Electron Devices.
[198] Edmund T Rolls,et al. Attractor networks , 2010 .
[199] Y. Dan,et al. Spike timing-dependent plasticity: a Hebbian learning rule. , 2008, Annual review of neuroscience.
[200] R. Douglas,et al. A multi-chip pulse-based neuromorphic infrastructure and its application to a cortical model of orientation selectivity , 2006 .
[201] D. Ielmini,et al. Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories , 2011, Nanotechnology.
[202] Stefano Ambrogio,et al. Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM) , 2016, IEEE Electron Device Letters.
[203] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[204] Steve B. Furber,et al. The SpiNNaker Project , 2014, Proceedings of the IEEE.
[205] Gregory S. Snider,et al. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication , 2010, Nature.
[206] Frederick T. Chen,et al. Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance , 2010, 2010 International Electron Devices Meeting.
[207] John Shalf,et al. Computing beyond Moore's Law , 2015, Computer.
[208] Jeremy Levy,et al. Materials issues for quantum computation , 2013 .
[209] Yoshio Nishi,et al. Model of metallic filament formation and rupture in NiO for unipolar switching , 2010 .
[210] Tuo-Hung Hou,et al. 3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation , 2014, 2014 IEEE International Electron Devices Meeting.
[211] Johannes Schemmel,et al. A wafer-scale neuromorphic hardware system for large-scale neural modeling , 2010, Proceedings of 2010 IEEE International Symposium on Circuits and Systems.
[212] R. Waser,et al. Thermochemical resistive switching: materials, mechanisms, and scaling projections , 2011 .
[213] Alessandro Calderoni,et al. A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP) , 2018, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.
[214] S. Ambrogio,et al. Normally-off Logic Based on Resistive Switches—Part I: Logic Gates , 2015, IEEE Transactions on Electron Devices.
[215] Giacomo Indiveri,et al. Scaling mixed-signal neuromorphic processors to 28 nm FD-SOI technologies , 2016, 2016 IEEE Biomedical Circuits and Systems Conference (BioCAS).
[216] B. Gao,et al. A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations , 2013, IEEE Transactions on Electron Devices.
[217] Daniele Ielmini,et al. Physical origin of the resistance drift exponent in amorphous phase change materials , 2011 .
[218] Thomas N. Theis,et al. The End of Moore's Law: A New Beginning for Information Technology , 2017, Computing in Science & Engineering.
[219] J. Pfister,et al. A triplet spike-timing–dependent plasticity model generalizes the Bienenstock–Cooper–Munro rule to higher-order spatiotemporal correlations , 2011, Proceedings of the National Academy of Sciences.
[220] P. J. Sjöström,et al. Rate, Timing, and Cooperativity Jointly Determine Cortical Synaptic Plasticity , 2001, Neuron.
[221] M. Kozicki,et al. Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ , 2007, IEEE Transactions on Electron Devices.
[222] Berger. Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.
[223] Giacomo Indiveri,et al. Memory and Information Processing in Neuromorphic Systems , 2015, Proceedings of the IEEE.
[224] Yasunobu Nakamura,et al. Quantum computers , 2010, Nature.
[225] Alessandro Calderoni,et al. Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity With RRAM Synapses , 2018, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.
[226] Luping Shi,et al. Enabling an Integrated Rate-temporal Learning Scheme on Memristor , 2014, Scientific Reports.
[227] G. Indiveri,et al. Neuromorphic architectures for spiking deep neural networks , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).
[228] Jongin Kim,et al. Electronic system with memristive synapses for pattern recognition , 2015, Scientific Reports.
[229] Quoc V. Le,et al. Sequence to Sequence Learning with Neural Networks , 2014, NIPS.
[230] R. Williams,et al. Sub-nanosecond switching of a tantalum oxide memristor , 2011, Nanotechnology.
[231] B. DeSalvo,et al. CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: Auditory (Cochlea) and visual (Retina) cognitive processing applications , 2012, 2012 International Electron Devices Meeting.
[232] Bernard Brezzo,et al. TrueNorth: Design and Tool Flow of a 65 mW 1 Million Neuron Programmable Neurosynaptic Chip , 2015, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[233] Yuan Xie,et al. A Study on Practically Unlimited Endurance of STT-MRAM , 2017, IEEE Transactions on Electron Devices.
[234] Daniel J. Amit,et al. Modeling brain function: the world of attractor neural networks, 1st Edition , 1989 .
[235] F. Merrikh Bayat,et al. Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits , 2018, Nature Communications.
[236] T. Hasegawa,et al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. , 2011, Nature materials.
[237] F ROSENBLATT,et al. The perceptron: a probabilistic model for information storage and organization in the brain. , 1958, Psychological review.
[238] D. Ielmini,et al. Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[239] Wei Yang Lu,et al. Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.
[240] Timothée Masquelier,et al. Competitive STDP-Based Spike Pattern Learning , 2009, Neural Computation.
[241] A S Spinelli,et al. Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity , 2017, Scientific Reports.
[242] X. Miao,et al. Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems , 2014, Scientific Reports.
[243] L. Chua. Memristor-The missing circuit element , 1971 .
[244] D. Ielmini,et al. Attractor networks and associative memories with STDP learning in RRAM synapses , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).
[245] Shoji Sakamoto,et al. An 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput , 2012, 2012 IEEE International Solid-State Circuits Conference.
[246] Jiantao Zhou,et al. Stochastic Memristive Devices for Computing and Neuromorphic Applications , 2013, Nanoscale.
[247] Manuel Le Gallo,et al. Stochastic phase-change neurons. , 2016, Nature nanotechnology.
[248] Enrico Prati,et al. Quantum neuromorphic hardware for quantum artificial intelligence , 2017 .
[249] J J Hopfield,et al. Neurons with graded response have collective computational properties like those of two-state neurons. , 1984, Proceedings of the National Academy of Sciences of the United States of America.
[250] Carver Mead,et al. Analog VLSI and neural systems , 1989 .
[251] H-S Philip Wong,et al. Memory leads the way to better computing. , 2015, Nature nanotechnology.
[252] D. Ielmini,et al. Phase change materials and their application to nonvolatile memories. , 2010, Chemical reviews.
[253] G. Bi,et al. Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type , 1998, The Journal of Neuroscience.
[254] Pritish Narayanan,et al. Neuromorphic computing using non-volatile memory , 2017 .
[255] Seong-Geon Park,et al. Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory , 2011, IEEE Electron Device Letters.
[256] Peter W. Shor,et al. Polynomial-Time Algorithms for Prime Factorization and Discrete Logarithms on a Quantum Computer , 1995, SIAM Rev..
[257] Sachin S. Sapatnekar,et al. Spin-Based Computing: Device Concepts, Current Status, and a Case Study on a High-Performance Microprocessor , 2015, Proceedings of the IEEE.
[258] Kyeong-Sik Min,et al. New Memristor-Based Crossbar Array Architecture with 50-% Area Reduction and 48-% Power Saving for Matrix-Vector Multiplication of Analog Neuromorphic Computing , 2014 .
[259] Walter Senn,et al. Learning Real-World Stimuli in a Neural Network with Spike-Driven Synaptic Dynamics , 2007, Neural Computation.
[260] Sally A. McKee,et al. Hitting the memory wall: implications of the obvious , 1995, CARN.
[261] Shinhyun Choi,et al. Comprehensive physical model of dynamic resistive switching in an oxide memristor. , 2014, ACS nano.
[262] Stefano Ambrogio,et al. Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory Under Pulsed Cycling Regime , 2018, IEEE Transactions on Electron Devices.
[263] Rainer Waser,et al. Phase-Change and Redox-Based Resistive Switching Memories , 2015, Proceedings of the IEEE.
[264] M. Kozicki,et al. A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte , 2006, IEEE Transactions on Nanotechnology.
[265] D. Ielmini,et al. Complementary switching in metal oxides: Toward diode-less crossbar RRAMs , 2011, 2011 International Electron Devices Meeting.
[266] Geoffrey E. Hinton,et al. ImageNet classification with deep convolutional neural networks , 2012, Commun. ACM.
[267] D. Ielmini,et al. Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM , 2011, IEEE Transactions on Electron Devices.
[268] Tanguy Chouard,et al. Machine intelligence , 2015, Nature.
[269] D. Ielmini,et al. Physical modeling of voltage-driven resistive switching in oxide RRAM , 2012, 2012 IEEE International Integrated Reliability Workshop Final Report.
[270] Yoshua Bengio,et al. Gradient-based learning applied to document recognition , 1998, Proc. IEEE.
[271] Giacomo Indiveri,et al. A differential memristive synapse circuit for on-line learning in neuromorphic computing systems , 2017, ArXiv.