DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors

The first successful demonstration of high-performance InP/InGaAs heterojunction bipolar transistors utilizing a highly carbon-doped base is reported. The detailed device characteristics including dc, RF, and noise performance have been investigated. For the first time base layers free of hydrogen passivation have been obtained using chemical beam epitaxy. The HBT's showed almost ideal dc characteristics; a gain independent of collector current, a near unity ideality factor, a very small offset-voltage, and a high breakdown voltage. Devices having two 1.5 /spl mu/m/spl times/15 /spl mu/m emitter fingers exhibited a maximum f/sub T/ of 115 GHz and f/sub max/ of 52 GHz. The device also exhibited a minimum noise figure of 3.6 dB and associated gain of 13.2 dB at a collector current level of 2 mA where a f/sub T/ of 29 GHz and f/sub max/ of 23 GHz were measured. The nearly ideal dc characteristics, excellent speed performance, and RF noise performance demonstrate the great potential of the carbon-doped base InP/InGaAs HBT's. >

[1]  B. Jalali,et al.  Wideband HBT circuits for operation above 10 GHz and power supply voltages below 5 V , 1992 .

[2]  H. Ichino,et al.  Application of AlGaAs/GaAs ballistic collection transistors to multiplexer and preamplifier circuits , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[3]  R. J. Hawkins,et al.  Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure , 1977 .

[4]  R. Q. Lane,et al.  The determination of device noise parameters , 1969 .

[5]  K. Kurishima,et al.  Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures , 1992 .

[6]  P. Wisk,et al.  Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors , 1991 .

[7]  P. Asbeck,et al.  InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base , 1992, IEEE Electron Device Letters.

[8]  H. Lüth,et al.  Carbon incorporation in MOMBE-grown Ga0.47In0.53As , 1989 .

[9]  O. Nakajima,et al.  Current induced degradation of Be-doped AlGaAs/GaAs HBTs and its suppression by Zn diffusion into extrinsic base layer , 1990, International Technical Digest on Electron Devices.

[10]  T. Tanbun-ek,et al.  High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy , 1989 .

[11]  C. Tu,et al.  Highly carbon-doped p-type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy , 1991 .

[12]  Young-Kai Chen,et al.  Ultrahigh Be doping of Ga0.47In0.53As by low‐temperature molecular beam epitaxy , 1989 .

[13]  J. Hayes,et al.  Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base , 1988, IEEE Electron Device Letters.

[14]  A. S. Jordan,et al.  Carbon doping of III–V compounds grown by MOMBE , 1990 .

[15]  G. Stillman,et al.  InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with a carbon-doped base grown by MOCVD , 1992, IEEE Electron Device Letters.

[16]  S. Chandrasekhar,et al.  Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors , 1991 .

[17]  D. Rensch,et al.  Reliability of high-performance AlInAs/GaInAs heterojunction bipolar transistors under forward bias and temperature stress , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[18]  C. Fonstad,et al.  Growth and metallization of AlGaAs/GaAs carbon-doped HBTs using trimethylamine alane by CBE , 1991, IEEE Electron Device Letters.

[19]  David J. Roulston,et al.  Design study of AlGaAs/GaAs HBTs , 1990 .

[20]  S. Bui,et al.  High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts , 1991, IEEE Electron Device Letters.

[21]  Y. Chen,et al.  Subpicosecond InP/InGaAs heterostructure bipolar transistors , 1989, IEEE Electron Device Letters.

[22]  R.N. Nottenburg,et al.  Microwave noise performance of InP/InGaAs heterostructure bipolar transistors , 1989, IEEE Electron Device Letters.