Electron drift mobility in hydrogenated a‐Si

The electron drift mobility μd was measured in hydrogenated a‐Si films prepared by rf and dc glow discharge in silane and by reactive sputtering in an Ar‐H2 gas mixture. The electron transport in the glow‐discharge material was found to be nondispersive. The highest observed room‐temperature drift mobility, 0.8 cm2/V  s, is a factor of 8 higher than previously reported. An electron drift mobility of 0.05 cm2/V s was observed in the sputtered material.