A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs

An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed. Key features include an original iteration scheme and an almost complete vectorization of the program. The simulator has been used to characterize nonequilibrium effects in deep submicron nMOSFETs. Substantial overshoot effects are noticeable at gate lengths of 0.25 mu m at room temperatures. >

[1]  T. Kobayashi,et al.  Two-dimensional analysis of velocity overshoot effects in ultrashort-channel Si MOSFET's , 1985, IEEE Transactions on Electron Devices.

[2]  K. Blotekjaer.  Transport equations for electrons in two-valley semiconductors , 1970 .

[3]  Bruno Riccò,et al.  MOS2: an efficient MOnte Carlo Simulator for MOS devices , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[4]  W. Fichtner,et al.  A hot-carrier analysis of submicrometer MOSFET's , 1988, IEEE Electron Device Letters.

[5]  H. D. Rees,et al.  Calculation of steady state distribution functions by exploiting stability , 1968 .

[6]  C. Jacoboni,et al.  The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials , 1983 .

[7]  P. J. Price,et al.  Monte Carlo calculations on hot electron energy tails , 1977 .

[8]  M. Charef,et al.  Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices , 1985 .

[9]  H. Gummel.  A self-consistent iterative scheme for one-dimensional steady state transistor calculations , 1964 .

[10]  A.T. Wu,et al.  Performance and hot-electron reliability of deep-submicron MOSFET's , 1987, 1987 International Electron Devices Meeting.

[11]  Masaaki Tomizawa,et al.  Nonstationary carrier dynamics in quarter-micron Si MOSFETs , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[12]  J. T. Clemens,et al.  Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.