GeSn Heterojunction LEDs on Si Substrates
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Gregor Mussler | Dan Buca | Martin Kittler | Erich Kasper | Marc Schmid | Michael Oehme | Mathias Kaschel | Martin Gollhofer | Tzanimir Arguirov | Konrad Kostecki | G. Mussler | M. Oehme | J. Schulze | E. Kasper | D. Buca | M. Kittler | T. Arguirov | M. Schmid | Kaiheng Ye | M. Kaschel | Roman Alexander Korner | Jorg Schulze | K. Kostecki | Kaiheng Ye | M. Gollhofer | R. Korner
[1] M. Oehme,et al. Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si , 2011 .
[2] Jörg Schulze,et al. Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy , 2011 .
[3] R. Soref. Silicon Photonics: A Review of Recent Literature , 2010 .
[4] B. Holländer,et al. Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors , 2013 .
[5] Martin Kittler,et al. Germanium tin: silicon photonics toward the mid-infrared , 2013 .
[6] J. Werner,et al. Germanium on Silicon Photodetectors with Broad Spectral Range , 2010 .
[7] Weijun Fan,et al. Electronic band structure and effective mass parameters of Ge1-xSnx alloys , 2012 .
[8] J. Tolle,et al. Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes , 2011 .
[9] Richard A. Soref,et al. Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate , 2013 .
[10] J. Schulze,et al. Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si , 2011, IEEE Photonics Technology Letters.
[11] R Loo,et al. GeSn/Ge heterostructure short-wave infrared photodetectors on silicon. , 2012, Optics express.
[12] M. Oehme,et al. Direct bandgap narrowing in Ge LED's on Si substrates. , 2013, Optics express.
[13] M. Oehme,et al. Germanium waveguide photodetectors integrated on silicon with MBE , 2008 .
[14] T. Kamins,et al. Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy , 2012 .
[15] Jesse Lu,et al. Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate. , 2009, Optics express.
[16] M. Romagnoli,et al. An electrically pumped germanium laser. , 2012, Optics express.
[17] Jörg Schulze,et al. Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn , 2013 .
[18] R. Kotlyar,et al. Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors , 2013 .
[19] M. Oehme,et al. Strain relaxation of metastable SiGe/Si: Investigation with two complementary X-ray techniques , 2012 .
[20] K. Yu,et al. Band anticrossing in highly mismatched Sn x Ge 1-x semiconducting alloys , 2008 .
[21] J. Schulze,et al. Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes , 2014 .
[22] Jurgen Michel,et al. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. , 2009, Optics letters.