Ultra-thin buried nitride integration for multi-VT, low-variability and power management in planar FDSOI CMOSFETs
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X. Garros | O. Faynot | F. Andrieu | D. Lafond | G. Molas | P. Nguyen | J. Widiez | R. Tisseur | O. Weber | A. Toffoli | F. Allain | H. Dansas | C. Tabone | L. Brevard | J. Dechamp | E. Guiot