Role of recombination processes during multipulse femtosecond microstructuring of silicon surface

[1]  E. Yakovlev,et al.  Influence of accumulation effects on heating of silicon surface by femtosecond laser pulses , 2015 .

[2]  Evgeny B. Yakovlev,et al.  Modeling of thin Cr film oxidation under the action of ultrashort laser pulses , 2013, Fundamentals of Laser Assisted Micro- and Nanotechnologies.

[3]  Y. M. Zhu,et al.  Evolution of micro-spikes on silicon surface etched by femtosecond laser with different fabrication conditions , 2012, Other Conferences.

[4]  T. Derrien,et al.  Formation of femtosecond laser induced surface structures on silicon: Insights from numerical modeling and single pulse experiments , 2011, 1108.1685.

[5]  Chunlei Guo,et al.  Direct creation of black silicon using femtosecond laser pulses , 2011 .

[6]  G. Nielson,et al.  Excitation rate dependence of Auger recombination in silicon , 2010 .

[7]  G. A. Martsinovsky,et al.  Generation of surface electromagnetic waves in semiconductors under the action of femtosecond laser pulses , 2009 .

[8]  V. Hommes,et al.  Silicon surface morphology study after exposure to tailored femtosecond pulses , 2006 .

[9]  N. Mansour,et al.  Formation of Conical Microstructures of Silicon with Picosecond Laser Pulses in Air , 2006 .

[10]  Gang Yin,et al.  Silicon microstructuring using ultrashort laser pulses , 2005, SPIE/COS Photonics Asia.

[11]  S. Ashitkov,et al.  Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses , 2004 .

[12]  Young Ki Choi,et al.  NUMERICAL ANALYSIS ON HEAT TRANSFER CHARACTERISTICS OF A SILICON FILM IRRADIATED BY PICO-TO FEMTOSECOND PULSE LASERS , 2003 .

[13]  H. Dai,et al.  Photoexcited carrier diffusion near a Si(111) surface: Non-negligible consequence of carrier-carrier scattering , 1997 .

[14]  Baerbel Rethfeld,et al.  Theory of ultrashort laser pulse interaction with a metal , 1997, Other Conferences.

[15]  Jerry R. Meyer,et al.  Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs , 1980 .

[16]  N. Nilsson,et al.  The temperature dependence of the Auger recombination coefficient of undoped silicon , 1979 .

[17]  W. Gerlach,et al.  On the radiative recombination rate in silicon , 1972 .

[18]  Eric Mazur,et al.  Femtosecond Laser Micromachining , 2013 .

[19]  W. Kautek,et al.  Femtosecond laser ablation of silicon–modification thresholds and morphology , 2002 .

[20]  van Driel HM.  Kinetics of high-density plasmas generated in Si by 1.06- and 0.53- microm picosecond laser pulses. , 1987, Physical review. B, Condensed matter.