Neutrons-Induced IGBT Failure: Effects of the Number of Tested Devices on the Cross Section Calculation
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Antoine D. Touboul | Frederic Wrobel | Frederic Saigne | Jerome Boch | F. Wrobel | F. Saigné | A. Touboul | J. Boch | L. Foro | Lionel L. Foro | Karima Guetarni | K. Guetarni
[1] M.S. Adler,et al. The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device , 1984, IEEE Transactions on Electron Devices.
[2] E. Normand,et al. Neutron-induced single event burnout in high voltage electronics , 1997 .
[3] H. Zeller. Cosmic ray induced failures in high power semiconductor devices , 1995 .
[4] Frank Pfirsch,et al. Cosmic radiation as a cause for power device failure and possible countermeasures , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
[5] J. Gasiot,et al. Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout , 1995 .
[6] Uwe Scheuermann,et al. Reliability challenges of automotive power electronics , 2009, Microelectron. Reliab..
[7] Kenneth F. Galloway,et al. SEGR and SEB in n-channel power MOSFETs , 1996 .
[8] Robert Ecoffet,et al. Heavy ion induced failures in a power IGBT , 1997 .
[9] Vijay K. Garg,et al. Prognostic and Warning System for Power-Electronic Modules in Electric, Hybrid Electric, and Fuel-Cell Vehicles , 2008, IEEE Transactions on Industrial Electronics.
[10] E. G. Stassinopoulos,et al. Comparison of experimental measurements of power MOSFET SEBs in dynamic and static modes , 1991 .
[11] Antoine D. Touboul,et al. On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum , 2012, Microelectron. Reliab..
[12] C. Poivey,et al. Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance , 2012, IEEE Transactions on Nuclear Science.
[13] E. G. Stassinopoulos,et al. Charge generation by heavy ions in power MOSFETs, burnout space predictions and dynamic SEB sensitivity , 1992 .
[14] Robert Ecoffet,et al. Cell design modifications to harden an N-channel power IGBT against single event latchup , 1999 .
[15] Barry N. Taylor,et al. Guidelines for Evaluating and Expressing the Uncertainty of Nist Measurement Results , 2017 .
[16] Bimal K. Bose,et al. Power electronics-an emerging technology , 1989 .
[17] Bimal K. Bose,et al. Power Electronics and Motor Drives Recent Progress and Perspective , 2009, IEEE Transactions on Industrial Electronics.