论文信息 - 0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS

0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS

In this paper, a 0.18-V input three-stage charge pump circuit applying forward body bias is proposed. In the developed charge pump, all the MOSFETs are forward body biased by using the inter-stage/output voltages. By applying the proposed charge pump as the startup in the boost converter, the lower kick-up input voltage of the boost converter can be achieved. To verify the circuit characteristics, four test circuits have been implemented by using 65nm CMOS process. The measured available output current of the proposed charge pump under 0.18-V input voltage can be improved more than 150%. In addition, the boost converter can successfully been boosted from 0.18-V input to the 0.74-V output under 6mA output current. The proposed circuit is suitable for extremely low voltage applications such as harvesting energy sources.

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