论文信息 - Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory - 字舞流文

Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory

T. Tang | J. Feng | B. Qiao | Y. Lai | Y. Y. Lin | Y. Zhang | B. Chen | B. Cai