Chapter 3 – Field Effect Transistors: FETs and HEMTs

Publisher Summary This chapter discusses the principles of operation and applications of field effect transistors (FET). Field effect transistors, specifically high electron mobility transistors (HEMTs) or modulation-doped field-effect transistors are extensively used in low-noise and power amplifiers at microwave and millimeter-wave frequencies. The chapter describes the mechanisms of current voltage and charge control in HEMTs. It also provides an overview of small-signal and large-signal equivalent circuit models of FET that are used in circuit design. The chapter also discusses the issues related to device scaling and operation of FETs as low-noise and power amplifier devices. The emergence of crystal growth techniques including molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has enabled the fabrication of HEMTs using a variety of material systems. The selection of a material system depends on application and operating frequency. The performance of these devices as low-noise and power amplification devices is summarized. These devices have demonstrated their ability for insertion in high-volume commercial applications such as wireless and optical communication systems. This chapter also focuses on the various design issues involving power amplifiers for wireless handsets and the suitability of GaAs pHEMTs for this application. The AlInAs/GalnAs HEMT with its high-current density and superior high-frequency performance has enabled the fabrication of digital circuits operating at 80 Gb/s. The various issues related with application of AlInAs/GalnAs HEMT for digital circuits are also discussed.

[1]  S. Wada,et al.  A 27/GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1 /spl mu/m double-deck-shaped (DDS) gate E/D-HJFETs , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[2]  N. Iwata,et al.  Power Heterojunction FETs for Low-Voltage Digital Cellular Applications , 1995 .

[3]  K. Yamamoto,et al.  A high efficiency, 2 V single-supply voltage operation RF front-end MMIC for 1.9 GHz Personal Handy Phone Systems , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[4]  P. Tasker,et al.  0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz , 1988, IEEE Electron Device Letters.

[5]  R. Matyi,et al.  A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHz , 1988, IEEE Electron Device Letters.

[6]  T. Noda,et al.  InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer , 1993, IEEE Electron Device Letters.

[7]  S. Shanfield,et al.  Large periphery, high power pseudomorphic HEMTs , 1993, 15th Annual GaAs IC Symposium.

[8]  T. Mishima,et al.  High Gm MBE-grown InP based HEMTs with a very low contact resistance triple capping layer , 1995, Seventh International Conference on Indium Phosphide and Related Materials.

[9]  Y. Imai,et al.  2-46.5 GHz quasi-static 2:1 frequency divider IC using InAlAs/InGaAs/InP HEMTs , 1997 .

[10]  T. Drummond,et al.  Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs , 1986 .

[11]  W. Kopp,et al.  High-performance 0.15-/spl mu/m-gate-length pHEMTs enhanced with a low-temperature-grown GaAs buffer , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[12]  T. Kobayashi,et al.  Device technologies for InP-based HEMTs and their application to ICs , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

[13]  R. Lai,et al.  Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT , 1993, IEEE Microwave and Guided Wave Letters.

[14]  P. Tasker,et al.  Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs , 1989 .

[15]  M. Abe,et al.  Ultrahigh-speed HEMT LSI technology , 1990, 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).

[16]  W. Prost,et al.  High breakdown voltage InGaAs/InAlAs HFET using In0.5Ga0.5P spacer layer , 1994 .

[17]  R. Lai,et al.  A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier , 1997, IEEE Microwave and Guided Wave Letters.

[18]  H.-C. Sun,et al.  A high-gain monolithic D-band InP HEMT amplifier , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[19]  P. Tasker,et al.  Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs , 1989, IEEE Electron Device Letters.

[20]  Chun-Yen Chang,et al.  2-V-operation /spl delta/-doped power HEMT's for personal handy-phone systems , 1997 .

[21]  H. Hida,et al.  A 0.25 mu m inner sidewall-assisted super self-aligned gate heterojunction FET fabricated using all dry-etching technology for low voltage controlled LSIs , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[22]  S. Tehrani,et al.  P-HEMTs for low-voltage portable applications using filled gate fabrication process , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[23]  J. B. Boos,et al.  InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process , 1991 .

[24]  C. Park,et al.  Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate , 1995 .

[25]  T. Rogers,et al.  Ku-band high power high efficiency pseudomorphic HEMT , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[26]  T. Inoue,et al.  Manufacturable and reliable millimeter wave HJFET MMIC technology using novel 0.15 /spl mu/m MoTiPtAu gates , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[27]  A. Platzker,et al.  High efficiency 40 watt PsHEMT S-band MIC power amplifiers , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[28]  D. A. Ahmari,et al.  A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[29]  M. Tomita,et al.  7 mm gate width power heterojunction FETs for Li-ion battery operated personal digital cellular phones , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[30]  U. Mishra,et al.  High uniformity 75 GHz junction HEMTs (JHEMTs) using a dry-etch gate technology , 1995, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

[31]  E. Glass,et al.  A true enhancement mode single supply power HFET for portable applications , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[32]  P. Smith,et al.  Millimeter wave power performance of InAlAs/InGaAs/InP HEMTs , 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

[33]  M. Berroth,et al.  Broad-band determination of the FET small-signal equivalent circuit , 1990 .

[34]  P. Tasker,et al.  The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFET , 1988 .

[35]  N. Iwata,et al.  1.2 V operation 1.1 W heterojunction FET for portable radio applications , 1995, Proceedings of International Electron Devices Meeting.

[36]  J. B. Boos,et al.  InAlAs/InGaAs/InP junction HEMTs , 1990 .

[37]  K. Aufinger,et al.  A 50 GHz implanted base silicon bipolar technology with 35 GHz static frequency divider , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

[38]  T. Enoki,et al.  High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital ICs , 1996 .

[39]  M. Hueschen,et al.  Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs , 1988 .

[40]  T. Mimura,et al.  Enhancement-Mode High Electron Mobility Transistors for Logic Applications , 1981 .

[41]  P. Chao,et al.  Microwave and mm-wave power amplification using pseudomorphic HEMTs , 1990 .

[42]  T. Enoki,et al.  Impact of two-step-recessed gate structure on RF performance of InP-based HEMTs , 1998 .

[43]  P. Smith,et al.  94 GHz low-noise HEMT , 1989 .

[44]  T. Enoki,et al.  High-frequency performance for sub-0.1 mu m gate InAs-inserted-channel InAlAs/InGaAs HEMT , 1992 .

[45]  R. A. McTaggart,et al.  High gain AlInAs/GaInAs/InP HEMT's with individually grounded source finger vias , 1995, IEEE Electron Device Letters.

[46]  Tadashi Maeda,et al.  Analytical expression for operating speed of GaAs SCFL D-type flip-flops , 1997 .

[47]  J. Bock,et al.  42 GHz static frequency divider in a Si/SiGe bipolar technology , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[48]  W. Kopp,et al.  High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors , 1985, IEEE Electron Device Letters.

[49]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[50]  H. Hida,et al.  High-speed ring oscillators using planar p+-gate n-AlGaAs/GaAs 2DEG FETs , 1986 .

[51]  T. Enoki,et al.  Reliability study on InAlAs/InGaAs HEMTs with an InP recess-etch stopper and refractory gate metal , 1997 .

[52]  P. Smith,et al.  Extremely high gain 0.15 mu m gate-length InAlAs/InGaAs/InP HEMTs , 1991 .

[53]  O. Ishikawa,et al.  A high efficiency normally-off MODFET power MMIC for PHS operating under 3.0 V single-supply condition , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[54]  Y. Saito,et al.  Reliability study on pseudomorphic InGaAs power HEMT devices at 60 GHz , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[55]  S. Blight,et al.  Surface influence on the conductance DLTS spectra of GaAs MESFET's , 1986, IEEE Transactions on Electron Devices.

[56]  W. R. Curtice,et al.  A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers , 1985, 1985 IEEE MTT-S International Microwave Symposium Digest.

[57]  D. Ueda,et al.  1.5 V-operation GaAs spike-gate power FET with 65% power-added efficiency , 1995, Proceedings of International Electron Devices Meeting.

[58]  P. Fay,et al.  Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications , 1998 .

[59]  R. Yarborough,et al.  Four-watt, Kt-band MMIC amplifier , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[60]  Naoki Harada,et al.  Frequency divider using InAlAs/InGaAs HEMT DCFL-NOR gates , 1993 .

[61]  J. Mun,et al.  A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications , 1996 .

[62]  N. Iwata,et al.  2.2 V operation power heterojunction FET for personal digital cellular telephones , 1995 .

[63]  Michael Schlechtweg,et al.  35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-/spl mu/m AlGaAs/GaAs-HEMTs , 1997 .

[64]  G. S. Dow,et al.  Q-band high-efficiency monolithic HEMT power prematch structures , 1995 .

[65]  Hikaru Ikeda,et al.  Analogue/Digital dual power module using ion-implanted GaAs MESFETs , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[66]  U. Mishra,et al.  High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs , 1995, IEEE Electron Device Letters.

[67]  Jenshan Lin,et al.  An In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT with 65.2% power-added efficiency under 1.2 V operation , 1998 .

[68]  Hiroshi Ito,et al.  0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD , 1995, Seventh International Conference on Indium Phosphide and Related Materials.

[69]  T. Mimura,et al.  Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration , 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

[70]  D. Delagebeaudeuf,et al.  Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET , 1982, IEEE Transactions on Electron Devices.

[71]  S. Shanfield,et al.  A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[72]  T. Enoki,et al.  An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[73]  H. Fukui.  Optimal noise figure of microwave GaAs MESFET's , 1979, IEEE Transactions on Electron Devices.

[74]  G. S. Dow,et al.  Ka-band high efficiency 1 watt power amplifier , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

[75]  T. Enoki,et al.  High-performance 0.1-/spl mu/m-gate enhancement-mode InAlAs/InGaAs HEMTs using two-step-recessed gate technology , 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

[76]  D. Streit,et al.  High-gain W band pseudomorphic InGaAs power HEMTs , 1991, IEEE Electron Device Letters.

[77]  S. C. Wang,et al.  W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/ , 1995 .

[78]  K. C. Hwang,et al.  A reliable ECR passivation technique on the 0.1 /spl mu/m InAlAs/InGaAs HEMT device , 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

[79]  P. Liu,et al.  94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs , 1990, IEEE Electron Device Letters.

[80]  April Brown,et al.  InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers , 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

[81]  E. Glass,et al.  Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[82]  P. Chao,et al.  Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy , 1988, Technical Digest., International Electron Devices Meeting.

[83]  Jenshan Lin,et al.  High performance pseudomorphic power HEMTs , 1997 .

[84]  S. Maas,et al.  Modeling MESFETs for intermodulation analysis of mixers and amplifiers , 1990 .

[85]  P. Liu,et al.  60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs , 1991, IEEE Electron Device Letters.

[86]  Josef Bock,et al.  46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology , 1996 .

[87]  W. Prost,et al.  High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakage , 1995, Seventh International Conference on Indium Phosphide and Related Materials.

[88]  T. Enoki,et al.  InGaAs/InP double channel HEMT on InP , 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

[89]  T. Itoh,et al.  Ku-band super low-noise pseudomorphic heterojunction field-effect transistors (HJFET) with high producibility and high reliability , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[90]  Lawrence E. Larson,et al.  Ultra-high speed modulation-doped field-effect transistors: a tutorial review , 1992, Proc. IEEE.

[91]  H. Shimawaki,et al.  40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBTs , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[92]  P. C. Chao,et al.  44 GHz hybrid HEMT power amplifiers , 1989, IEEE MTT-S International Microwave Symposium Digest.

[93]  M. B. Das.  A high aspect ratio design approach to millimeter-wave HEMT structures , 1985, IEEE Transactions on Electron Devices.

[94]  B. Hughes.  A temperature noise model for extrinsic FETs , 1992 .

[95]  T. Hwang,et al.  Pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in low-cost plastic packaging for DBS application , 1996 .

[96]  A. Sano,et al.  Optical repeater circuit design based on InAlAs/InGaAs HEMT digital IC technology , 1997 .

[97]  P. Ho,et al.  An extremely low-noise InP-based HEMT with silicon nitride passivation , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[98]  Kevin J. Chen,et al.  High-performance enhancement-mode InAlAs/InGaAs HEMTs using non-alloyed ohmic contact and Pt-based buried-gate , 1995, Seventh International Conference on Indium Phosphide and Related Materials.

[99]  L. Forbes,et al.  Buried-channel GaAs MESFET's with frequency-independent output conductance , 1987, IEEE Electron Device Letters.

[100]  A. Platzker,et al.  High power, high efficiency PHEMTs for use at 8 GHz , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[101]  P. Chao,et al.  DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs , 1989 .

[102]  P. Liu,et al.  High-power V-band pseudomorphic InGaAs HEMT , 1991, IEEE Electron Device Letters.

[103]  J. Alamo,et al.  Off-state breakdown in InAlAs/InGaAs MODFET's , 1995 .

[104]  X. Wallart,et al.  V-band high-power/low-voltage InGaAs/InP composite channel HEMTs , 1998 .

[105]  L. Kushner.  Output performance of idealized microwave power amplifiers , 1989 .

[106]  N. Iwata,et al.  3 V operation L-band power double-doped heterojunction FETs , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

[107]  Al-free InP-based high electron mobility transistors: Design, fabrication and performance , 1997 .

[108]  H. Zirath,et al.  A new empirical nonlinear model for HEMT and MESFET devices , 1992 .

[109]  M. Matloubian,et al.  K-band GaInAs/InP channel power HEMTs , 1995 .

[110]  A. Wakejima,et al.  Thermally stable InAlAs/InGaAs heterojunction FET with AlAs/InAs superlattice insertion layer , 1996 .

[111]  April Brown,et al.  High power and high efficiency AlInAs/GaInAs on InP HEMTs , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[112]  M. Mitama.  Mobile communications systems trend in Japan and device requirements , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

[113]  K. Matsunaga,et al.  Ku-band 15 W single-chip HJFET power amplifier , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[114]  M. Rodwell,et al.  48 GHz static frequency dividers in transferred-substrate HBT technology , 1998 .

[115]  M. Pospieszalski.  Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .

[116]  T. Enoki,et al.  0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects , 1994 .

[117]  M. Feuer,et al.  Direct-coupled FET logic circuits on InP , 1991, IEEE Electron Device Letters.

[118]  K. Matsunaga,et al.  Highly efficient double-doped heterojunction FET's for battery-operated portable power applications , 1994, IEEE Electron Device Letters.

[119]  Kenji Watanabe,et al.  A Ku-band ultra super low-noise pseudomorphic heterojunction FET in a hollow plastic PKG , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[120]  H. Miyamoto,et al.  Highly reliable InAlAs/InGaAs heterojunction FETs fabricated using completely molybdenum-based electrode technology (COMET) , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[121]  P.M. Smith,et al.  Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs , 1989, IEEE Electron Device Letters.

[122]  R. P. Smith,et al.  Ku-band power amplifier using pseudomorphic HEMT devices for improved efficiency , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[123]  S. Denbaars,et al.  Breakdown characterization of AlInAs/GaInAs junction modulated HEMTs (JHEMTs) with regrown ohmic contacts by MOCVD , 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

[124]  I. Adesida,et al.  Enhancement-mode InP-based HEMT devices and applications , 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

[125]  Y. Okamoto,et al.  A 12-GHz, 12-W HJFET amplifier with 48% peak power-added efficiency , 1995, IEEE Microwave and Guided Wave Letters.