hole-injection, respectively. Goodpunchthrough immunity andlowoperation current areachieved because thelateral A newmethodtoprogram anderase NAND deviceselectrical field iseliminated. Thebiasconditions forthe without using highvoltage Fowler-Nordheim (FN)stressing memoryoperation aresummarized inTable 2. isinvestigated. Impact Ionization generated substrate Hot Fig. 2showsthesimulated results using ISE-TCADfor Electron (JIBE) andBandtoBandtunneling HotHole adevice withgatelength of0.Im.Forerase operation, the (BBHH)areproposed forSONOS-type NAND flash memory electrical filed isconcentrated attheoverlap region between application. Bothjunctions arebiased withthesamevoltagegate/junctions andhot-holes aregenerated through BBHH to perform double-side-charge-injection without lateral mechanism. Forprogram operation, theelectrical field is electrical field induced current. A noveldivided bitlineconcentrated atthebottom ofjunctions andhot-electron is architecture isintroduced toachieve thisoperation. Fast generated by impactionization ofhot-hole through a program anderase speed of< 100sisachieved. Good10K Junction-BBHH mechanism. Thesesimulation results cycling endurance andhightemperature dataretention are indicate that themechanism forhot-electron programming demonstrated. IIHE/BBHH forfloating gatememoryand andhot-hole erasing aredifferent. body-tied FinFET-type SONOSarealso demonstrated. Device Characterization