论文信息 - Explanation of the laser-induced oscillatory phenomenon in amorphous semiconductor films

Explanation of the laser-induced oscillatory phenomenon in amorphous semiconductor films

Abstract A new model is presented which explains the recently observed oscillatory phenomena in self-supporting a-GeSe2 films. The model is based on a combination of thermal and photoinduced effects. It can also be used for predicting the experimental conditions for observing light-induced bistability and oscillatory phenomena in other amorphous semiconductor films.

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