Electrical reliability and interfacial adhesion of Cu(Mg) thin films for interconnect process adaptability

[1]  M. Shatzkes,et al.  Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces , 1970 .

[2]  R. Houk Mass spectrometry of inductively coupled plasmas , 1986 .

[3]  Wei Wang,et al.  Low-temperature passivation of copper by doping with Al or Mg , 1995 .

[4]  Wei Wang,et al.  Alloying of copper for use in microelectronic metallization , 1995 .

[5]  Shyam P. Murarka,et al.  Multilevel interconnections for ULSI and GSI era , 1997 .

[6]  Michael Lane,et al.  Adhesion and debonding of multi-layer thin film structures , 1998 .

[7]  Shyam P. Murarka,et al.  Capacitance–voltage, current–voltage, and thermal stability of copper alloyed with aluminium or magnesium , 1998 .

[8]  M. Kakihana,et al.  Materials Research Society Symposium - Proceedings , 2000 .

[9]  Jaehyeong Kim,et al.  Diffusion barrier and electrical characteristics of a self-aligned MgO layer obtained from a Cu(Mg) alloy film , 2000 .

[10]  G. Ramanath,et al.  Sequence of Mg segregation, grain growth, and interfacial MgO formation in Cu–Mg alloy films on SiO2 during vacuum annealing , 2003 .

[11]  Michael Lane,et al.  Relationship between interfacial adhesion and electromigration in Cu metallization , 2003 .

[12]  G. Ramanath,et al.  Interfacial phase formation in Cu-Mg alloy films on SiO2 , 2004 .

[13]  G. Ramanath,et al.  Kinetics of interfacial reaction in Cu–Mg alloy films on SiO2 , 2004 .

[14]  V. Teslyuk,et al.  IEEE International Reliability Physics Symposium , 2007 .