Dopant segregation in polycrystalline silicon

Dopant segregation at grain boundaries in polycrystalline silicon has been investigated. Arsenic, phosphorus, and boron were ion implanted into low‐pressure, chemically‐vapor‐deposited polycrystalline‐silicon films. All films were then annealed at 1000 °C for 1 h, and some were subsequently further annealed at 800, 850, or 900 °C for 64, 24, or 12 h, respectively. For phosphorus and arsenic the room‐temperature resistivity of the films was found to be higher after annealing at lower temperatures. By successively annealing the same sample at lower and higher temperatures, the resistivity would repeatedly increase and decrease, indicating reversible dopant segregation at the grain boundaries. Hall measurements were used to estimate the number of active dopant atoms within the grains and the number of atoms segregated at the grain boundaries as a function of annealing temperature. A theory of segregation in systems of small particles has been developed. Using this theory, the heat of segregation of arsenic and phosphorus in polycrystalline silicon was calculated. For boron no appreciable segregation was observed.

[1]  R. Dutton,et al.  Segregation of Arsenic to the Grain Boundaries in Polycrystalline Silicon , 1980 .

[2]  M. Y. Tsai,et al.  Shallow junctions by high‐dose As implants in Si: experiments and modeling , 1980 .

[3]  K. Saraswat,et al.  Arsenic segregation in polycrystalline silicon , 1980 .

[4]  N.C.C. Lu,et al.  A quantitative model of the effect of grain size on the resistivity of polycrystalline silicon resistors , 1980, IEEE Electron Device Letters.

[5]  J. Bloem,et al.  Comparison of dopant incorporation into polycrystalline and monocrystalline silicon , 1979 .

[6]  Krishna C. Saraswat,et al.  Phosphorus Doping of Low Pressure Chemically Vapor‐Deposited Silicon Films , 1979 .

[7]  J. Murota,et al.  Relationship between total arsenic and electrically active arsenic concentrations in silicon produced by the diffusion process , 1979 .

[8]  Giorgio Baccarani,et al.  Transport properties of polycrystalline silicon films , 1978 .

[9]  Yasuo Wada,et al.  Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon , 1978 .

[10]  J. Jerhot,et al.  Hall effect in polycrystalline semiconductors , 1978 .

[11]  P. Wynblatt,et al.  Surface energy and solute strain energy effects in surface segregation , 1977 .

[12]  E. Machlin,et al.  Prediction of Segregation to Alloy Surfaces from Bulk Phase Diagrams , 1976 .

[13]  W. Spear,et al.  Electronic properties of substitutionally doped amorphous Si and Ge , 1976 .

[14]  J. Seto.  The electrical properties of polycrystalline silicon films , 1975 .

[15]  J. J. Burton,et al.  Surface segregation in alloys , 1975 .

[16]  F. Williams,et al.  Binary alloy surface compositions from bulk alloy thermodynamic data , 1974 .

[17]  Richard B. Fair,et al.  Effect of complex formation on diffusion of arsenic in silicon , 1973 .

[18]  Resistivity of Doped Polycrystalline Silicon Films , 1973 .

[19]  T. Sedgwick,et al.  Chemical Vapor Deposited Polycrystalline Silicon , 1972 .

[20]  J. Heleskivi,et al.  On the Hall Voltage in an Inhomogeneous Material , 1972 .

[21]  Theodore I. Kamins,et al.  Hall Mobility in Chemically Deposited Polycrystalline Silicon , 1971 .

[22]  R. F. Lever,et al.  Arsenic Clustering in Silicon , 1971 .

[23]  J. Volger,et al.  Note on the Hall Potential Across an Inhomogeneous Conductor , 1950 .