论文信息 - Boron Implanted Contacts on High Purity Germanium - 字舞流文

Boron Implanted Contacts on High Purity Germanium

P. Siffert | J. Grob | R. Stuck | J. Ponpon | P. Burger

[1] R. Hall,et al. High Purity Germanium for Detector Fabrication , 1971 .

[2] J. Mayer,et al. Technique used in Hall effect analysis of ion implanted Si and Ge , 1970 .

[3] D. Sigurd,et al. LATTICE LOCATION OF HEAVY GROUP III AND V ELEMENTS IMPLANTED INTO Ge. , 1970 .

[4] D. Sigurd,et al. Lattice disorder in germanium by boron ion bombardment , 1970 .

[5] S. T. Picraux,et al. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering , 1968 .

[6] G. Alton,et al. Radiation damage and substitutional chemical impurity effects in single-crystal germanium bombarded with 40-keV B+, Al+, Ga+, Ge+, P+, As+, and Sb+ ions , 1968 .

[7] J. Llacer. Geometric Control of Surface Leakage Current and Noise in Lithium Drifted Silicon Radiation Detectors , 1966 .

[8] R. N. Hall,et al. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide , 1964 .

[9] W. Augustyniak,et al. Annealing of Radiation Defects in Semiconductors , 1959 .