1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping

We have studied the electronic properties, in relation to structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between CC and SiH activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrates of different types (n type and p type) and different doping concentrations, from low-doped (∼1014cm−3) to highly doped (∼1019cm−3). We show that the monolayers on n-, p-, and p+-silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as ∼10−7Acm−2 and high-quality capacitance-voltage characteristics. The monolayers formed on n+-type silicon are more disordered and therefore exhibit larger leakage current densities (>10−4Acm−2) when embedded in a silicon∕monolayer∕metal junction. The inferior structural and electronic properties obtained with n+-type ...

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