Substrate options and add-on process modules for monolithic RF silicon technology

Add-on process modules as enhancements of standard high-frequency silicon integration processes are discussed. Such modules can be added without any interference with the core process before (pre-process modules), during (mid-process modules), or after (post-process modules) the circuit integration. High-resistivity silicon substrates, the patterned metal ground shield, and bulk micromachining are presented as examples in each category, respectively.

[1]  T. M. Hyltin,et al.  Microstrip Transmission on Semiconductor Dielectrics , 1965 .

[2]  Daniel C. Edelstein,et al.  Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates , 1997 .

[3]  Joachim N. Burghartz.  Status and Trends in Silicon RF Technology , 1999, 29th European Solid-State Device Research Conference.

[4]  R. S. Pengelly,et al.  Monolithic broadband GaAs f.e.t. amplifiers , 1976 .

[5]  A. Chin,et al.  Fabrication of very high resistivity Si with low loss and cross talk , 2000, IEEE Electron Device Letters.

[6]  Tzuen-Hsi Huang,et al.  Isolation on Si wafers by MeV proton bombardment for RF integrated circuits , 2001 .

[7]  J. Burghartz,et al.  Substrate effects in monolithic RF transformers on silicon , 2002 .

[8]  Alvin J. Joseph,et al.  Current status and future trends of SiGe BiCMOS technology , 2001 .

[9]  Denis Flandre,et al.  Substrate crosstalk reduction using SOI technology , 1997 .

[10]  Hongrui Jiang,et al.  On-chip spiral inductors suspended over deep copper-lined cavities , 2000 .

[11]  R. A. Pucel,et al.  Design Considerations for Monolithic Microwave Circuits , 1981 .

[12]  Harold Gamble,et al.  Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI) , 2000 .

[13]  E. Yeatman,et al.  High Q microwave inductors on silicon by surface tension self-assembly , 2000 .

[14]  Pasqualina M. Sarro,et al.  IC-compatible two-level bulk micromachining process module for RF silicon technology , 2001 .

[15]  CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics , 1997 .

[16]  C. Yue,et al.  On-chip Spiral Inductors With Patterned Ground Shields For Si-based RF IC's , 1997, Symposium 1997 on VLSI Circuits.

[17]  H. Chen,et al.  A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure , 2001, IEEE Electron Device Letters.