论文信息 - Current leakage and parasitic capacitance in transient second and triple order Cockcroft-Walton voltage multiplier

Current leakage and parasitic capacitance in transient second and triple order Cockcroft-Walton voltage multiplier

Theoretical models of the double and triple Cockroft-Walton voltage multiplier in the transient region are reported. The circuits discussed are commonly used in power ICs to allow the switching-on of an MOS device. The models take parasitic capacitance and current leakage into account.<<ETX>>

G. Di Cataldo | G. Palumbo

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