A current mirroring integration based readout circuit for high performance infrared FPA applications

Reports a current mirroring integration (CMI) CMOS readout circuit for high-resolution infrared focal plane array (FPA) applications. The circuit uses a feedback structure with current mirrors to provide stable bias voltage across the photodetector diode, while mirroring the diode current to an integration capacitor. The integration capacitor can be placed outside of the unit pixel, reducing the pixel area and allowing one to integrate the current on larger capacitance for larger charge storage capacity and dynamic range. The CMI unit cell allows almost rail-to-rail voltage swing on the integration capacitance for low voltage operation. The detector bias voltage can be adjusted independently for various detector requirements. By virtue of current feedback in the CMI structure, very low (ideally zero) input impedance is achieved. The unit-cell contains just nine MOS transistors and occupies 20 /spl mu/m/spl times/25 /spl mu/m area in a 0.8-/spl mu/m CMOS process. The CMI circuit provides a maximum charge storage capacity of 5.25/spl times/10/sup 7/ electrons and a maximum transimpedance of 6/spl times/10/sup 7/ /spl Omega/ for a 5 V power supply and 2 pF off-pixel integration capacitance.

[1]  Chung-Yu Wu,et al.  New design techniques for a complementary metal-oxide semiconductor current readout integrated circuit for infrared detector arrays , 1995 .

[2]  Gordon W. Roberts,et al.  High-swing MOS current mirror with arbitrarily high output resistance , 1992 .

[3]  Chung-Yu Wu,et al.  High-performance CMOS buffered gate modulation input (BGMI) readout circuits for IR FPA , 1998, IEEE J. Solid State Circuits.

[4]  Bedabrata Pain,et al.  Low-power low-noise analog circuits for on-focal-plane signal processing of infrared sensors , 1993, Defense, Security, and Sensing.

[5]  Lester J. Kozlowski.  Low-noise capacitive transimpedance amplifier performance versus alternative IR detector interface schemes in submicron CMOS , 1996, Defense, Security, and Sensing.

[6]  C. Kim,et al.  High injection efficiency readout circuit for low resistance infra-red detector , 1999 .

[7]  T. Sugimoto,et al.  A 1.5 V, 4.1 mW dual channel audio delta-sigma D/A converter , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[8]  Hee Chul Lee,et al.  New unit cell of current mirroring direct injection circuit for focal plane arrays , 1997, Defense, Security, and Sensing.

[9]  Chih-Cheng Hsieh,et al.  Focal-plane-arrays and CMOS readout techniques of infrared imaging systems , 1997, IEEE Trans. Circuits Syst. Video Technol..

[10]  Mary J. Hewitt,et al.  Infrared readout electronics: a historical perspective , 1994, Defense, Security, and Sensing.

[11]  Tayfun Akin,et al.  Infrared FPA readout circuit based on current mirroring integration , 1999, Defense, Security, and Sensing.

[12]  J. Johnson.  Hybrid infrared focal plane signal and noise model , 1999 .

[13]  Chung-Yu Wu,et al.  A new cryogenic CMOS readout structure for infrared focal plane array , 1997, IEEE J. Solid State Circuits.

[14]  T. Akin,et al.  A CMOS current mirroring integration readout structure for infrared focal plane arrays , 1998, Proceedings of the 24th European Solid-State Circuits Conference.

[15]  Eric R. Fossum,et al.  Infrared readout electronics for space-science sensors: state of the art and future directions , 1993, Optics & Photonics.