Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition

Thick GaN, 10-30 µm, was grown on sapphire substrate by a sublimation method for the first time. GaN was homoepitaxially grown on this thick layer by metalorganic chemical vapor deposition to obtain a high-quality layer. Stimulated emission from a photopumped homoepitaxial GaN grown on thick GaN prepared by the sublimation method at room temperature was demonstrated. The threshold of the stimulated emission was estimated to be 1.04 MW/cm2.