Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO2) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high quality. The graphene/boron-nitride/SiO2 devices have a significantly increased peak electron/hole mobility of 3400/2200 cm2/Vs with a reduced effective doping density over reference graphene/SiO2 devices. The mobility dependence as a function of carrier density is compared with a physically based empirical model and is in agreement with the improvements due to a consistent reduction in the substrate induced phonon and impurity scattering and an improvement in the overall surface quality owed to the boron-nitride interlayer that separates the graphene from the SiO2. Large-area G/BN thin films are promising for future high performance thin film electronic devices.

[1]  O. Nayfeh.  Graphene Transistors on Mechanically Flexible Polyimide Incorporating Atomic-Layer-Deposited Gate Dielectric , 2011, IEEE Electron Device Letters.

[2]  O. Nayfeh.  Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects , 2011, IEEE Transactions on Electron Devices.

[3]  P. Ajayan,et al.  Graphene growth via carburization of stainless steel and application in energy storage. , 2011, Small.

[4]  T. Taniguchi,et al.  Boron nitride substrates for high mobility chemical vapor deposited graphene , 2011, 1105.4938.

[5]  Bin Yu,et al.  Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitride , 2011, 1105.1485.

[6]  Pablo Jarillo-Herrero,et al.  Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. , 2011, Nature materials.

[7]  K. Novoselov,et al.  Micrometer-scale ballistic transport in encapsulated graphene at room temperature. , 2011, Nano letters.

[8]  O. Nayfeh,et al.  Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors , 2011, IEEE Electron Device Letters.

[9]  Kwang S. Kim,et al.  Roll-to-roll production of 30-inch graphene films for transparent electrodes. , 2010, Nature nanotechnology.

[10]  Jun Lou,et al.  Large scale growth and characterization of atomic hexagonal boron nitride layers. , 2010, Nano letters.

[11]  K. Shepard,et al.  Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.

[12]  Deep Jariwala,et al.  Atomic layers of hybridized boron nitride and graphene domains. , 2010, Nature materials.

[13]  S. Banerjee,et al.  Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.

[14]  E. H. Hwang,et al.  Scattering mechanisms and Boltzmann transport in graphene , 2007, 0708.0404.

[15]  M. Katsnelson,et al.  Electron scattering on microscopic corrugations in graphene , 2007, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences.