Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage
暂无分享,去创建一个
[1] W. Olbrich,et al. Superimposed pulse bias voltage used in arc and sputter technology , 1993 .
[2] Chuan Yi Tang,et al. A 2.|E|-Bit Distributed Algorithm for the Directed Euler Trail Problem , 1993, Inf. Process. Lett..
[3] K. Reichelt,et al. The preparation of thin films by physical vapour deposition methods , 1990 .
[4] H. Pulker,et al. Activated reactive ion plating (ARIP) , 1989 .
[5] S. Bull,et al. Engineering with surface coatings: The role of coating microstructure , 1989 .
[6] W. Sproul,et al. The effect of N2 partial pressure, deposition rate and substrate bias potential on the hardness and texture of reactively sputtered TiN coatings , 1989 .
[7] I. Petrov,et al. Microstructure modification of TiN by ion bombardment during reactive sputter deposition , 1989 .
[8] R. Zenner,et al. Reactive arc vapor ion deposition of TiN, ZrN and HfN , 1987 .
[9] L. Hultman,et al. Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering , 1987 .
[10] T. Takagi,et al. Ion–surface interactions during thin film deposition , 1984 .
[11] Russell Messier,et al. Revised structure zone model for thin film physical structure , 1984 .
[12] K. L. Mittal,et al. Adhesion Measurement of Thin Films , 1976 .
[13] John A. Thornton,et al. Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings , 1974 .
[14] William D. Davis,et al. Analysis of the Electrode Products Emitted by dc Arcs in a Vacuum Ambient , 1969 .
[15] B. Movchan,et al. STRUCTURE AND PROPERTIES OF THICK CONDENSATES OF NICKEL, TITANIUM, TUNGSTEN, ALUMINUM OXIDES, AND ZIRCONIUM DIOXIDE IN VACUUM. , 1969 .