Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700mS/mm. At 18GHz, a minimum noise figure of 0.55dB with 15.0dB associated gain was measured. At 94GHz, a minimum noise figure as low as 2.4dB with 5.4dB associated gain was also obtained. This is the best noise performance ever reported for GaAs-based HEMTs.